Abstract: Sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display, such as an organic light-emitting diode (OLED) display, are provided. In one example, a sub-pixel includes a substrate, adjacent overhang structures, an anode, an OLED material, a cathode, an encapsulation layer stack. The encapsulation layer stack includes a first layer, a second layer disposed over the first layer, and a third layer. The first layer and the second layer have a first portion disposed over the cathode, a second portion disposed over a sidewall of each overhang structure, and a third portion disposed under an underside surface of an extension of each overhang structure. A gap is defined by contact of the first portion of the second layer and the third portion of the second layer. The third layer is disposed over the second layer outside of the gap.

Abstract: Disclosed is a multi-dimensional analysis method for a tripping risk of a whole transmission line due to a lightning shielding failure. A quantity of thunderstorm days, a tower size, a terrain proportion, an altitude, and insulation configuration data are collected for a transmission line for which a tripping risk due to a lightning shielding failure needs to be analyzed, and a striking distance, an exposure distance, a lightning resisting level of the line after altitude factor correction, and a lightning shielding failure risk of a single-base tower are calculated in turn. Characteristics of a lightning shielding failure under different nominal heights, quantities of thunderstorm days, and terrains are studied. Representative combination conditions are selected to calculate a tripping risk of a typical tower due to the lightning shielding failure. A weight coefficient is extracted, to calculate a tripping risk of the whole line due to the lightning shielding failure.

Abstract: The present disclosure relates to the technical field of secondary battery, and discloses a positive electrode material and a preparation method and use therefor, a lithium-ion battery positive electrode poly piece, and a lithium-ion battery.

Abstract: Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

Abstract: The present disclosure discloses a tropical instability wave early warning method based on temporal-spatial cross-scale attention fusion, including performing cross-scale spatial map fusion on the multi-scale feature maps by a bilateral local attention mechanism, calculating a prediction loss by the global feature description map, and combining the prediction loss and the regularization loss for optimization training of neural networks; predicting a sea surface temperature at a moment T based on the optimally trained neural networks, selecting data at K moments before the moment T and inputting the data into the optimally trained neural networks, outputting a predicted value of tropical instability waves by the optimally trained neural networks, and drawing a temporal-spatial image of the tropical instability waves by associating the predicted value with coordinates, so as to achieve early warning of the tropical instability waves. The device includes a processor and a memory.

Abstract: The present invention discloses an El Nino extreme weather warning method based on incremental learning, comprising: through supervised representation learning, selectively constraining, by a multi-scale feature frequency domain distillation technology, drift of low-frequency components of the multi-scale features based on incremental training, and memorizing knowledge learned by the parallel convolutional neural networks in old tasks; adaptively learning different fusion parameters according to different time spans of the input multi-scale data by using a multi-scale feature adaptive fusion technology, so as to enhance the ability to learn new tasks; and outputting a Nino3.4 index reflecting a change rule of El Nino through fully connected layers according to the adaptively fused features, establishing a mapping function of an extreme rainfall probability r based on the Nino3.4 index, and in response to predicting that the value r goes beyond a threshold value k.

Abstract: The present invention relates to the field of lithium ion battery positive electrode materials, and discloses a positive electrode material, a preparation method therefor, a use thereof, and a lithium ion battery.

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

Abstract: A soluble ACF and a truncated form thereof, a fusion protein thereof and preparation methods therefor. A soluble ACEI and a truncated form thereof, as well as a use of the fusion protein in the preparation of a drug for an ACEI-related disease.

Abstract: A method of depositing a silicon-containing material is disclosed. Some embodiments of the disclosure provide films which fill narrow CD features without a seam or void. Some embodiments of the disclosure provide films which form conformally on features with wider CD. Embodiments of the disclosure also provide superior quality films with low roughness, low defects and advantageously low deposition rates.

Abstract: The present disclosure relates to the technical field of secondary battery, and discloses a positive electrode material and a preparation method and use therefor, a lithium-ion battery positive electrode poly piece, and a lithium-ion battery.

Abstract: Disclosed is a multi-dimensional analysis method for a tripping risk of a whole transmission line due to a lightning shielding failure. A quantity of thunderstorm days, a tower size, a terrain proportion, an altitude, and insulation configuration data are collected for a transmission line for which a tripping risk due to a lightning shielding failure needs to be analyzed, and a striking distance, an exposure distance, a lightning resisting level of the line after altitude factor correction, and a lightning shielding failure risk of a single-base tower are calculated in turn. Characteristics of a lightning shielding failure under different nominal heights, quantities of thunderstorm days, and terrains are studied. Representative combination conditions are selected to calculate a tripping risk of a typical tower due to the lightning shielding failure. A weight coefficient is extracted, to calculate a tripping risk of the whole line due to the lightning shielding failure.

Abstract: The invention provides for treating HBV or HDV infection or inhibiting human sodium taurocholate co-transporting polypeptide (hNTCP) with a polymeric bile acid or salt thereof, and pharmaceutical compositions comprising a polymeric bile acid or salt thereof, and a second HBV or HDV medicament.

Abstract: Embodiments of the present technology may include semiconductor processing methods that include depositing a film of semiconductor material on a substrate in a substrate processing chamber. The deposited film may be sampled for defects at greater than or about two non-contiguous regions of the substrate with scanning electron microscopy. The defects that are detected and characterized may include those of a size less than or about 10 nm. The methods may further include calculating a total number of defects in the deposited film based on the sampling for defects in the greater than or about two non-contiguous regions of the substrate. At least one deposition parameter may be adjusted as a result of the calculation. The adjustment to the at least one deposition parameter may reduce the total number of defects in a deposition of the film of semiconductor material.

Abstract: The present disclosure relates to the technical field of secondary battery, and discloses a positive electrode material and a preparation method and use therefor, a lithium-ion battery positive electrode poly piece, and a lithium-ion battery.

Abstract: A traffic forwarding method includes determining, by a first network device, a first address resolution protocol (ARP) entry of the access device, where the first ARP entry is used to indicate a mapping relationship among a media access control (MAC) address, an Internet Protocol (IP) address, and an egress port, the egress port includes a standby egress port, and the first network device is connected to the protection link through the standby egress port, receiving traffic sent by a network side, determining whether a fault exists in the first multi-chassis link aggregation group (MC-LAG) link, and when the first network device determines that a fault exists in the first MC-LAG link, sending the traffic to the second network device through the protection link based on a standby egress port number in the first ARP entry, where the standby egress port number is used to indicate the standby egress port.

Abstract: Provided is a host factor specific for hepatitis B virus (HBV) infection. The specific host factor CREBH can remarkably enhance HBV infection. The specific host factor can, on the one hand, enhance entry of HBV, and on the other hand, enhance transcription of HBV to some extent. In the CREBH regulatory pathway there is a specific host factor SCARF2. During HBV infection, an N-terminus EGF-like domain of SCARF2 plays a crucial role in the infection and entry of HBV. The two correlated specific host factors provide a new target for inhibiting HBV infection.

Abstract: Embodiments of the present disclosure provide methods, devices and computer readable media for communication.

Abstract: An embodiment may involve server devices arranged into pods, each server device hosting computational instances, and a central computational instance configured to: (i) obtain per-pod lists of the instances hosted by the pods; (ii) determine a maximum number of the instances to arrange into batches; (iii) determine a group size for groups of the instances that are to be placed into the batches; (iv) execute a first phase that involves removing per-pod groups from the per-pod lists and adding them to the batches, until less of the instances than the group size remains in each of the per-pod lists; (v) execute a second phase that involves removing one of the instances from the per-pod lists and adding it to the batches, until none of the instances remains in any of the per-pod lists; and (vi) schedule one or more of the automations to take place in the data center.

Abstract: Processing methods disclosed herein comprise forming a nucleation layer and a flowable chemical vapor deposition (FCVD) film on a substrate surface by exposing the substrate surface to a silicon-containing precursor and a reactant. By controlling at least one of a precursor/reactant pressure ratio, a precursor/reactant flow ratio and substrate temperature formation of miniature defects is minimized. Controlling at least one of the process parameters may reduce the number of miniature defects. The FCVD film can be cured by any suitable curing process to form a smooth FCVD film.