Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: The present disclosure provides a method and an apparatus for subscribing to an analytics of model transfer status in a network, and a readable storage medium, the method includes: an application function AF sending a first message to a network data analytic function NWDAF directly or through a network exposure function NEF; the AF receiving, directly or through the NEF, analytics information of AI/ML model transfer status sent by the NWDAF, the analytics information being determined by the NWDAF according to received data of the AI/ML model transfer status sent by other network function(s) 5GC NF(s); the analytics information being used to adjust a network policy parameter and/or information of an application layer model.

Abstract: A method for preparing a basic copper carbonate is provided. The method includes: mixing a copper hydroxide with water to obtain a precursor slurry; adding an accelerator to the precursor slurry and mixing the two to obtain a first mixture; introducing gaseous carbon dioxide into the first mixture for reaction whereby obtaining a crude basic copper carbonate; and purifying the crude basic copper carbonate whereby obtaining the basic copper carbonate. The accelerator is at least one selected from the group consisting of an ammonia water and an ammonium salt.

Abstract: A port departure service processing method, apparatus and system. The method includes: determining the current master control system for executing a port departure service; during the process of executing the port departure service, if an error is detected in operating data of the current master control system, switching the unfinished port departure service to another normally operating system so as to continue execution; if the execution of the port departure service is not completed and after it is detected that the operating data of the current master control system returns to normal, switching to the current master control system to continue to execute the remaining port departure service; and after switching from the current master control system to the other system or switching from the other system back to the current master control system, correcting inconsistent data before and after switching.

Abstract: An oil cooling system for an electric machine that includes a housing and a stator accommodated in the housing, the stator having a first end part and a second end part in an axial direction of the electric machine. The oil cooling system includes an oil inlet, for receiving external cooling oil; a first annular oil application pipe, located at the first end part and in fluid communication with the oil inlet; and a second annular oil application pipe, located at the second end part and in fluid communication with the oil inlet. An axial oil application part is located between the first end part and the second end part and formed by a housing inner wall and a stator outer wall. The axial oil application part receives cooling oil from at least one of the first annular oil application pipe and the second annular oil application pipe.

Abstract: A gearbox includes a housing, a first shaft, accommodated in the housing and having a first large gear, the first shaft rotating about a first rotation axis, the first rotation axis being substantially parallel to an axial direction of the gearbox. A second shaft is accommodated in the housing and has a second large gear, the second shaft rotating about a second rotation axis, the second rotation axis being substantially parallel to the axial direction of the gearbox. An oil isolation plate which, together with the housing, forms a lubricating oil holding space, the lubricating oil holding space being substantially isolated from the first large gear and the second large gear.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

Abstract: A method for preparing a basic copper carbonate is provided. The method includes: mixing a copper hydroxide with water to obtain a precursor slurry; adding an accelerator to the precursor slurry and mixing the two to obtain a first mixture; introducing gaseous carbon dioxide into the first mixture for reaction whereby obtaining a crude basic copper carbonate; and purifying the crude basic copper carbonate whereby obtaining the basic copper carbonate. The accelerator is at least one selected from the group consisting of an ammonia water and an ammonium salt.

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts through the selective deposition of a fill material.

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color hardmask process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of masks in a three-color process.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

Abstract: Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of overlapping masks in a three-color process.

Abstract: Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method for processing a substrate includes: directing a stream of material from a PVD source toward a surface of a substrate at a first non-perpendicular angle to the plane of the surface to deposit the material on one or more features on the substrate and form a first overhang; etching the layer of the substrate beneath the features selective to the deposited material to form a first part of a pattern; removing the material from the features; directing the stream of material from the PVD source toward the surface of the substrate at a second non-perpendicular angle to the plane of the surface to deposit the material on the features on the substrate and form a second overhang; and etching the layer of the substrate beneath the features selective to the deposited material to form a second part of the pattern.

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.