Abstract: A process and a device for continuous flow side-chain alkylation which relate to the technical field of organic synthesis. In this process and the device for continuous flow side-chain alkylation, an ibuprofen raw material is prepared with alkylbenzene as a raw material. This raw material alkylbenzene is easily available and has a low cost, and is suitable for scale-up production. Moreover, an entire preparation process adopts continuous chemical synthesis, and a reaction time of each stage can be precisely controlled, which is beneficial to control a total reaction time and reduce an amount of impurities produced. In this way, a purity and a yield of the ibuprofen raw material are improved. In summary, a continuous synthesis method for side-chain alkylation of alkylbenzene provided by the present disclosure shows a low cost and a high yield.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: Provided is a device for processing an antistress cone of a main insulation layer of a cable. The device includes a support, a clamping unit, a cutting unit and an infeed unit. The clamping unit is mounted on the support and configured to clamp a cable. The cutting unit is slidably disposed on the support, capable of cutting the cable in the radial direction of the cable, and capable of performing feeding in the radial direction of the cable to adjust the cutting depth. The infeed unit is connected to and capable of driving the cutting unit and configured to drive the cutting unit to slide in the axial direction of the cable so that the cutting unit performs feeding and cutting in the axial direction of the cable.

Abstract: Provided is an insulating coating device for an electric wire, including a pressing pipe. The pressing pipe includes two first pressing parts which are configured to divide the pressing pipe into two parts along a longitudinal cross section of the pressing pipe, an inner wall of the pressing pipe is provided with an air bag, and the air bag is provided with an air pipe joint which penetrates to an outside of the pressing pipe. In the insulating coating device for the electric wire, a self-curing insulating material is coated on joints of the electric wires, the air bag is used to squeeze the self-curing insulating material such that the self-curing insulating material is shaped and compacted, so that cavities generated in a coating process is reduced, and the self-curing insulating material is uniformly attached to the joints of the electric wires.

Abstract: A process and a device for continuous flow side-chain alkylation which relate to the technical field of organic synthesis. In this process and the device for continuous flow side-chain alkylation, an ibuprofen raw material is prepared with alkylbenzene as a raw material. This raw material alkylbenzene is easily available and has a low cost, and is suitable for scale-up production. Moreover, an entire preparation process adopts continuous chemical synthesis, and a reaction time of each stage can be precisely controlled, which is beneficial to control a total reaction time and reduce an amount of impurities produced. In this way, a purity and a yield of the ibuprofen raw material are improved. In summary, a continuous synthesis method for side-chain alkylation of alkylbenzene provided by the present disclosure shows a low cost and a high yield.

Abstract: The present disclosure belongs to the technical field of chemical separation and purification, and in particular relates to a purification method and device for continuous distillation and separation of an ibuprofen intermediate raw material. The purification method comprises the following steps: carrying out a primary distillation on synthetic liquid to obtain a primary material and recovered 4-methyl-1-pentene, then carrying out a second-stage distillation on the primary material to obtain a second-stage material and a recovered crude toluene product; and carrying out a third-stage distillation on the second-stage material to obtain isobutyl benzene and a recovered crude n-butylbenzene product. Embodiment results show that the purification method provided by the present disclosure is high in product recovery rate and high in product purity, the purity of isobutyl benzene is up to 99.99 wt %, the recovery rate is up to 99.9 wt %, the impurity content is not higher than 50 ppm.

Abstract: The present disclosure belongs to the technical field of chemical separation and purification, and in particular relates to a purification method and device for continuous distillation and separation of an ibuprofen intermediate raw material. The purification method comprises the following steps: carrying out a primary distillation on synthetic liquid to obtain a primary material and recovered 4-methyl-1-pentene, then carrying out a second-stage distillation on the primary material to obtain a second-stage material and a recovered crude toluene product; and carrying out a third-stage distillation on the second-stage material to obtain isobutyl benzene and a recovered crude n-butylbenzene product. Embodiment results show that the purification method provided by the present disclosure is high in product recovery rate and high in product purity, the purity of isobutyl benzene is up to 99.99 wt %, the recovery rate is up to 99.9 wt %, the impurity content is not higher than 50 ppm.

Abstract: The present disclosure relates to the technical field of cable processing, and discloses a method for processing a reaction force cone of a cable main insulating layer. The method includes: two ends of a cable are clamped through a clamping device, and the cable is enabled to pass through a cutting device; a cutting depth of the cutting device in a radial direction and a cutting position of the cutting device in an axial direction are adjusted; the cutting device is started, and the cable is cut by the cutting device to form the reaction force cone.

Abstract: The present disclosure provides a gallium oxide semiconductor structure, a vertical gallium oxide-based power device, and a preparation method. An unintentionally doped gallium oxide layer (110) is transferred to a highly doped and highly thermally conductive heterogeneous substrate (200) by bonding and thinning; then a heavily doped gallium oxide layer (120) is formed on the gallium oxide layer by treating and ion implantation, thereby preparing the gallium oxide semiconductor structure including the heterogeneous substrate (200), the gallium oxide layer (110), and the heavily doped gallium oxide layer (120) stacked in sequence. In the vertical gallium oxide-based power device prepared on the basis of the gallium oxide semiconductor structure, the gallium oxide layer (110) is a thicker intermediate layer and a carrier concentration of the gallium oxide layer (110) is less than that of the heavily doped gallium oxide layer (120).

Abstract: Provided is an insulating coating device for an electric wire, including a pressing pipe. The pressing pipe includes two first pressing parts which are configured to divide the pressing pipe into two parts along a longitudinal cross section of the pressing pipe, an inner wall of the pressing pipe is provided with an air bag, and the air bag is provided with an air pipe joint which penetrates to an outside of the pressing pipe. In the insulating coating device for the electric wire, a self-curing insulating material is coated on joints of the electric wires, the air bag is used to squeeze the self-curing insulating material such that the self-curing insulating material is shaped and compacted, so that cavities generated in a coating process is reduced, and the self-curing insulating material is uniformly attached to the joints of the electric wires.

Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: The present disclosure relates to the technical field of cable processing, and discloses a method for processing a reaction force cone of a cable main insulating layer. The method includes: two ends of a cable are clamped through a clamping device, and the cable is enabled to pass through a cutting device; a cutting depth of the cutting device in a radial direction and a cutting position of the cutting device in an axial direction are adjusted; the cutting device is started, and the cable is cut by the cutting device to form the reaction force cone.

Abstract: Provided is a device for processing an antistress cone of a main insulation layer of a cable. The device includes a support, a clamping unit, a cutting unit and an infeed unit. The clamping unit is mounted on the support and configured to clamp a cable. The cutting unit is slidably disposed on the support, capable of cutting the cable in the radial direction of the cable, and capable of performing feeding in the radial direction of the cable to adjust the cutting depth. The infeed unit is connected to and capable of driving the cutting unit and configured to drive the cutting unit to slide in the axial direction of the cable so that the cutting unit performs feeding and cutting in the axial direction of the cable.

Abstract: A low parasitic inductance power module, which includes an input power terminal, an output power terminal, a top metal insulating substrate, a bottom metal insulating substrate and a plastic package shell, wherein the input power terminal includes a positive power terminal and a negative power terminal, the top metal insulating substrate and the bottom metal insulating substrate are stacked, chips are sintered on faces of both the top metal insulating substrate and the bottom metal insulating substrate opposite to each other, and the positive power terminal, the negative power terminal, and the output power terminal are all electrically connected with the chips; and the output power terminal includes a welding portion and a connecting portion located outside the plastic package shell, and the welding portion is located between the top metal insulating substrate and the bottom metal insulating substrate.

Abstract: The invention discloses a parallel electrode combination, which includes a first power module electrode and a second power module electrode, wherein a soldering portion of the first power module electrode and a soldering portion of the second power module electrode are respectively used to connect a copper layer of a power source inside a power module, and a connecting portion of the first power module electrode and a connecting portion of the second power module electrode are opposite in parallel. The invention further discloses a power module and a power module group using the parallel electrode combination. In the invention, the connecting portion of the first power module electrode and the connecting portion of the second power module electrode are opposite in parallel.

Abstract: A low parasitic inductance power module, which includes an input power terminal, an output power terminal, a top metal insulating substrate, a bottom metal insulating substrate and a plastic package shell, wherein the input power terminal includes a positive power terminal and a negative power terminal, the top metal insulating substrate and the bottom metal insulating substrate are stacked, chips are sintered on faces of both the top metal insulating substrate and the bottom metal insulating substrate opposite to each other, and the positive power terminal, the negative power terminal, and the output power terminal are all electrically connected with the chips; and the output power terminal includes a welding portion and a connecting portion located outside the plastic package shell, and the welding portion is located between the top metal insulating substrate and the bottom metal insulating substrate.

Abstract: The present disclosure relate to an improved portable distribution transformer hoisting rack, comprising a loose-leaf hold hoop, a fixed hold hoop, a supporting rod, and a length-adjustable adjusting rod, wherein: the loose-leaf hold hoop includes a first hold hoop, a second hold hoop, and a third hold hoop, the third hold hoop being disposed between the first hold hoop and the second hold hoop; one end of the supporting rod being rotatably connected to the third hold hoop; the other end of the supporting rod being provided with a hoisting assembly, one end of the adjusting rod being movably connected to the supporting rod, and the other end of the adjusting rod being movably connected to the fixed hold hoop.

Abstract: The invention discloses a parallel electrode combination, which includes a first power module electrode and a second power module electrode, wherein a soldering portion of the first power module electrode and a soldering portion of the second power module electrode are respectively used to connect a copper layer of a power source inside a power module, and a connecting portion of the first power module electrode and a connecting portion of the second power module electrode are opposite in parallel. The invention further discloses a power module and a power module group using the parallel electrode combination. In the invention, the connecting portion of the first power module electrode and the connecting portion of the second power module electrode are opposite in parallel.