Abstract: This invention provides a thumb screw connecting structure, including a thumb screw, a first stopper, and a second stopper, the first stopper and the second stopper are fixedly connected via the thumb screw; and a protruding fixing portion is disposed at the second stopper, an internal thread fitting the thumb screw is disposed inside the protruding fixing portion, and the protruding fixing portion is used to fix the thumb screw. The thumb screw connecting structure is convenient and efficient in use, the first stopper and the second stopper can be fixed without using a wrench or other tools, which is convenient as well as practical. This invention further provides a table and a chair, and the table and the chair are fixed by adopting the thumb screw connecting structures, which is convenient and practical when assembling and disassembling.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

Abstract: The present disclosure relates to the field of computer technologies, and discloses a method, system, and storage medium for displaying media content applicable to a social platform. The method includes: detecting an input operation about a dynamic area located around a media content displaying area; and responding to the input operation, and scrolling to display, according to a layout direction of media content loaded in the media content displaying area, the media content in the media content displaying area, where a width of the media content in a direction that is perpendicular to the layout direction of the media content is consistent with a width of the media content displaying area. Embodiments of the present invention do not need to intercept the media content, and also do not need to display a clear and complete picture by using a large picture floating layer, so as to reduce a workload of the system effectively.

Abstract: (Meth)acrylate pressure-sensitive adhesives, curable adhesive compositions that can be used to prepare the (meth)acrylate pressure-sensitive adhesives, and methods of making the (meth)acrylate pressure-sensitive adhesives are provided. More particularly, the (meth)acrylate pressure-sensitive adhesives contain (a) a meth(acrylate copolymer having a weight average molecular weight greater than 500,000 grams/mole (Daltons) and (b) a (meth)acrylate tackifier that has a weight average molecular weight greater than 20,000 grams/mole (Daltons) but no greater than 200,000 grams/mole (Daltons). The pressure-sensitive adhesives advantageously are prepared by ultraviolet (UV) curing a curable adhesive composition that contains minimal or no organic solvents.

Abstract: Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, a semiconductor device includes a main vertical trench metal oxide semiconductor field effect transistor (main-MOSFET). The main-MOSFET includes a plurality of parallel main trenches, wherein the main trenches comprise a first electrode coupled to a gate of the main-MOSFET, and a plurality of main mesas between the main trenches, wherein the main mesas comprise a main source and a main body of the main-MOSFET. The semiconductor device also includes a sense-diode. The sense-diode includes a plurality of sense-diode trenches, wherein each of the sense-diode trenches comprises a portion of one of the main trenches, and a plurality of sense-diode mesas between the source-FET trenches, wherein the sense-diode mesas comprise a sense-diode anode that is electrically isolated from the main source of the main-MOSFET.

Abstract: Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, an electronic circuit includes a vertical trench metal oxide semiconductor field effect transistor configured for switching currents of at least one amp and a current sensing field effect transistor configured to provide an indication of drain to source current of the MOSFET. A current sense ratio of the current sensing FET is at least 15 thousand and may be greater than 29 thousand.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

Abstract: (Meth)acrylate pressure-sensitive adhesives, curable adhesive compositions that can be used to prepare the (meth)acrylate pressure-sensitive adhesives, and methods of making the (meth)acrylate pressure-sensitive adhesives are provided. More particularly, the (meth)acrylate pressure-sensitive adhesives contain (a) a meth(acrylate copolymer having a weight average molecular weight greater than 500,000 grams/mole (Daltons) and (b) a (meth)acrylate tackifier that has a weight average molecular weight greater than 20,000 grams/mole (Daltons) but no greater than 200,000 grams/mole (Daltons). The pressure-sensitive adhesives advantageously are prepared by ultraviolet (UV) curing a curable adhesive composition that contains minimal or no organic solvents.

Abstract: Embodiments of apparatuses with a universal P2P service platform are disclosed herein. A unified infrastructure is built in such apparatuses and a unified P2P network may be established with such apparatuses. In various embodiments, such an apparatus comprises a P2P operating system (OS) virtual machine (VM) 202 and a client guest operating system (OS) virtual machine (VM) 204. There is a collection of P2P services in the P2P OS VM 202 and this VM 202 works as a peer node in the P2P network. There is a collection of API services in the client guest OS VM 204 and this VM 204 interacts with various P2P applications. The two VMs communicate with each other via a shared memory 216 and a virtual machine manager 214. In various embodiments, the apparatus further includes a security checker 318 located in the P2P OS VM 302. Other embodiments are also described.

Abstract: The present application provides a method and a system for detecting data of an instrument.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

Abstract: Vertical sense devices in vertical trench MOSFET. In accordance with an embodiment of the present invention, an electronic circuit includes a vertical trench metal oxide semiconductor field effect transistor configured for switching currents of at least one amp and a current sensing field effect transistor configured to provide an indication of drain to source current of the MOSFET. A current sense ratio of the current sensing FET is at least 15 thousand and may be greater than 29 thousand.

Abstract: A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.

Abstract: Disclosed in the present invention is a self-power generation radio frequency identification (RFID) tag, which comprises an identifier in which a first coil and a magnetic power generation bar are arranged, wherein the first coil is movably arranged in the identifier, and the magnetic power generation bar is arranged in parallel to the plane of the first coil; and the RFID tag also comprises a micro storage battery, which is electrically connected with the induction coil and the magnetic power generation bar. The self-power generation RFID tag is simple in structure, low in cost, convenient to maintain, energy-saving and environment-friendly.

Abstract: Embodiments of apparatuses with a universal P2P service platform are disclosed herein. A unified infrastructure is built in such apparatuses and a unified P2P network may be established with such apparatuses. In various embodiments, such an apparatus comprises a P2P operating system (OS) virtual machine (VM) 202 and a client guest operating system (OS) virtual machine (VM) 204. There is a collection of P2P services in the P2P OS VM 202 and this VM 202 works as a peer node in the P2P network. There is a collection of API services in the client guest OS VM 204 and this VM 204 interacts with various P2P applications. The two VMs communicate with each other via a shared memory 216 and a virtual machine manager 214. In various embodiments, the apparatus further includes a security checker 318 located in the P2P OS VM 302. Other embodiments are also described.

Abstract: Checking for memory access collisions in a multiple processor architecture is described. Memory access collisions may be found by simulating an instruction to be executed by a multiple processor computing system in which the processors share memory access, extracting memory access information from the instruction, searching a virtual memory map for a memory access conflict, and reporting the conflict if a conflict is found in the search.

Abstract: An enterprise knowledge management and sharing system having a plurality of services to facilitate members of an enterprise to create, capture, organize, refine, promote and/or publish knowledge of the enterprise is disclosed and described herein.

Abstract: Embodiments of plural application implementations in accordance with a unified data model are disclosed herein. A unified data model 102 may comprise contents104, threads 106 of contents, and categories 108 of threads, to which most application data are organized accordingly. Applications 110 may have extended data. Additionally, services 120 are pre-defined/provided to operate on data organized in accordance with the unified data model 102, including services to operate on contents 122, services to operate on threads 124 and services to operate categories 126. In various embodiments, a facility/utility may be further provided to instantiate a security database 130 for storing security settings for all or selected data items organized in accordance with the unified data model 102.