Abstract: The embodiments of the present application provide a processing unit. The processing unit comprises: an instruction fetching unit configured for fusing instruction of vector configuration instruction and vector operation instruction that are adjacent in order to obtain fusion instruction; an instruction decoding unit configured to decode the fusion instruction to obtain first execution information and second execution information; a vector configuration unit configured to execute the vector configuration instruction according to the first execution information, modify vector control register, and bypass the value of the modified vector control register to the vector operation unit; the vector operation unit configured to execute the vector operation instruction according to the second execution information and the value of the modified vector control register.

Abstract: The embodiments of the present application provide a processing unit. The processing unit comprises: an instruction fetching unit configured for fusing instruction of vector configuration instruction and vector operation instruction that are adjacent in order to obtain fusion instruction; an instruction decoding unit configured to decode the fusion instruction to obtain first execution information and second execution information; a vector configuration unit configured to execute the vector configuration instruction according to the first execution information, modify vector control register, and bypass the value of the modified vector control register to the vector operation unit; the vector operation unit configured to execute the vector operation instruction according to the second execution information and the value of the modified vector control register.

Abstract: The present invention provides, in part, compounds of Formula I: and pharmaceutically acceptable salts thereof and N-oxides thereof; processes for the preparation of; intermediates used in the preparation of; and compositions containing such compounds and the uses of such compounds for the treatment of D1-mediated (or D1-associated) disorders including cognitive and motivational impairments and negative symptoms associated with illnesses such as schizophrenia, depression, bipolar disorder, Parkinson's disease, Mild cognitive impairment (MCI), Alzheimer's disease, lupus, Huntington's disease, Parkinson's, dyskinesia, ADHD, post-traumatic stress disorder, autism spectrum disorder, treatment-resistant depression, major depressive disorder (MDD), drug dependence, Tourette's syndrome, tardive dyskinesias as well as impairments associated with age, chronic stress, sleep deprivation, combat, chronic fatigue; endocrine or metabolic diseases such as hyperglycemia, dislipidemia, diabetes, obesity, and sepsis; and c

Abstract: The present invention provides, in part, compounds of Formula I: and pharmaceutically acceptable salts thereof and N-oxides thereof; processes for the preparation of; intermediates used in the preparation of; and compositions containing such compounds (N-oxides thereof or or pharmaceutically acceptable salts of the compound or the N-oxides) and the uses of such compounds (N-oxides thereof or or pharmaceutically acceptable salts of the compound or the N-oxides) for the treatment of D1-mediated (or D1-associated) disorders including cognitive and motivational impairments and negative symptoms associated with illnesses such as schizophrenia, depression, bipolar disorder, Parkinson's disease, Mild cognitive impairment (MCI), Alzheimer's disease, lupus, Huntington's disease, Parkinson's, dyskinesia, ADHD, post-traumatic stress disorder, autism spectrum disorder, treatment-resistant depression, major depressive disorder (MDD), drug dependence, Tourette's syndrome, tardive dyskinesias as well as impairments asso

Abstract: The present invention provides, in part, compounds of Formula I: and pharmaceutically acceptable salts thereof and N-oxides thereof; processes and intermediates for preparation of; and compositions and uses thereof. The present invention further provides D1 agonists with reduced D1R desensitization, D1 agonists with a reduced ?-arrestin recruitment activity relative to Dopamine, D1 agonists interacting significantly with the Ser188 but not significantly with the Ser202 of a D1R when binding to the D1R, D1 agonists interacting less strongly with the Asp103 and interacting less strongly with the Ser198 of a D1R when binding to the D1R, and their uses.

Abstract: The present invention provides, in part, compounds of Formula I: and pharmaceutically acceptable salts thereof and N-oxides thereof; processes and intermediates for preparation of; and compositions and uses thereof. The present invention further provides D1 agonists with reduced D1R desensitization, D1 agonists with a reduced ?-arrestin recruitment activity relative to Dopamine, D1 agonists interacting significantly with the Ser188 but not significantly with the Ser202 of a D1R when binding to the D1R, D1 agonists interacting less strongly with the Asp103 and interacting less strongly with the Ser198 of a D1R when binding to the D1R, and their uses.

Abstract: The present invention provides, in part, compounds of Formula I: and pharmaceutically acceptable salts thereof and N-oxides thereof; processes and intermediates for preparation of; and compositions and uses thereof. The present invention further provides D1 agonists with reduced D1R desensitization, D1 agonists with a reduced ?-arrestin recruitment activity relative to Dopamine, D1 agonists interacting significantly with the Ser188 but not significantly with the Ser202 of a D1R when binding to the D1R, D1 agonists interacting less strongly with the Asp103 and interacting less strongly with the Ser198 of a D1R when binding to the D1R, and their uses.

Abstract: A dual die semiconductor package has a grid array of electrical contacts on a bottom surface of a substrate. There is a first semiconductor die with a base surface mounted to an upper surface of the substrate and the first semiconductor die has first die upper surface external electrical connection pads on an upper surface that are electrically connected to respective electrical contacts of the grid array. There is also a second semiconductor die with a base surface mounted to an upper surface of a lead frame flag. There are second die upper surface external electrical connection pads on an upper surface of the second semiconductor die. The dual die semiconductor package includes leads and at least some of the leads are electrically connected to respective pads that provide the second die upper surface external electrical connection pads. A package body at encloses the first semiconductor die and the second semiconductor die.

Abstract: A dual die semiconductor package has a grid array of electrical contacts on a bottom surface of a substrate. There is a first semiconductor die with a base surface mounted to an upper surface of the substrate and the first semiconductor die has first die upper surface external electrical connection pads on an upper surface that are electrically connected to respective electrical contacts of the grid array. There is also a second semiconductor die with a base surface mounted to an upper surface of a lead frame flag. There are second die upper surface external electrical connection pads on an upper surface of the second semiconductor die. The dual die semiconductor package includes leads and at least some of the leads are electrically connected to respective pads that provide the second die upper surface external electrical connection pads. A package body at encloses the first semiconductor die and the second semiconductor die.