Abstract: A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

Abstract: A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

Abstract: A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

Abstract: A transient voltage suppressing (TVS) device formed in an epitaxial layer of a first conductivity type supported on a semiconductor substrate. The TVS device further comprises a plurality of contact trenches opened and extended to a lower part of the epitaxial layer filled with a doped polysilicon layer of a second conductivity type wherein the trenches are further surrounded by a heavy dopant region of the second conductivity type. The TVS device further includes a metal contact layer disposed on a top surface of the epitaxial layer electrically connected to a Vcc electrode wherein the metal contact layer further directly contacting the doped polysilicon layer and the heavy dopant region of the second conductivity type.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: There is provided a method of making two electrically separated inductors using deposition and wet-etching techniques, which inductors are formed by interwinding one of the inductors within the other inductor on the same planar level. In still another aspect of the invention, there is provided a method of making various levels inductors, each level having at least two electrically separated inductors, using deposition and wet-etching techniques. The inductors on each planar level are formed by interwinding one of the inductors within the other inductor, and then stacking these in a preferred manner. In still another aspect, there is provided a manner of connecting together inductors formed according to the above methods in order to achieve various inductor configurations.

Abstract: A semiconductor device is described that includes one or more electrostatic discharge (ESD) protection circuits. Each circuit comprises reverse-biased steering diodes connected in series between power rail and signal ground, a bypass Zener diode and a substrate Zener diode. The Zener diodes provide ESD protection and the steering diode cooperate with the substrate Zener diode to provide a bypass function that is substantially symmetric about the signal ground. Noise in the circuit can be shunted using internal and/or external capacitances that can be implemented as Zener diodes.

Abstract: A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Abstract: A semiconductor device is described that includes one or more electrostatic discharge (ESD) protection circuits. Each circuit comprises reverse-biased steering diodes connected in series between power rail and signal ground, a bypass Zener diode and a substrate Zener diode. The Zener diodes provide ESD protection and the steering diode cooperate with the substrate Zener diode to provide a bypass function that is substantially symmetric about the signal ground. Noise in the circuit can be shunted using internal and/or external capacitances that can be implemented as Zener diodes.

Abstract: The present invention relates to a low pass filter incorporating coupled inductors to enhance stop band attenuation. In one embodiment, the coupled inductors are provided along with various capacitors to provide for superior performance within a smaller surface area of a semiconductor or ceramic integrated device. In a further specific embodiment, the capacitors are formed on an integrated device within an area on which entirely intertwined inductors are formed. In another embodiment, at least one further pair of coupled inductors is included to create additional frequency attenuation notches, as well as a wide stop-band.

Abstract: The present invention relates to a low pass filter incorporating coupled inductors to enhance stop band attenuation. In one embodiment, the coupled inductors are provided along with various capacitors to provide for superior performance within a smaller surface area of a semiconductor or ceramic integrated device. In a further specific embodiment, the capacitors are formed on an integrated device within an area on which entirely intertwined inductors are formed. In another embodiment, at least one further pair of coupled inductors is included to create additional frequency attenuation notches, as well as a wide stop-band.

Abstract: There is provided a method of making two electrically separated inductors using deposition and wet-etching techniques, which inductors are formed by interwinding one of the inductors within the other inductor on the same planar level. In still another aspect of the invention, there is provided a method of making various levels inductors, each level having at least two electrically separated inductors, using deposition and wet-etching techniques. The inductors on each planar level are formed by interwinding one of the inductors within the other inductor, and then stacking these in a preferred manner. In still another aspect, there is provided a manner of connecting together inductors formed according to the above methods in order to achieve various inductor configurations.