Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: Methods and systems are described for generating assessment maps. A method includes receiving a first data set reflecting distortions associated with a substrate and generating a second data set reflecting reduced noise in the distortions of the first data set. A third data set is generated by projecting a plurality of direction components associated with the second data set to a radial direction and a stress or strain map is generated indicating at least one of stress or strain exhibited by the substrate by determining a magnitude associated with a subset of the third data set.

Abstract: Methods and systems are described for generating assessment maps. A method includes receiving a first vector map comprising a first set of vectors each indicating a distortion of a particular location on a substrate and generating a second vector map indicating a change in direction of a magnitude of the distortion of the particular location on the substrate. The method further includes generating a third vector map comprising vectors reflecting reduced noise in distortions across the plurality of locations on the substrate and generating a fourth vector map projecting a direction component of each vector component in the third set of vectors to a radial direction. The method further includes generating a fifth vector map by grouping the vectors of the fourth set of vectors and determining a magnitude associated with each group of vectors.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: Methods and systems are described for generating assessment maps. A method includes receiving a first vector map comprising a first set of vectors each indicating a distortion of a particular location on a substrate and generating a second vector map indicating a change in direction of a magnitude of the distortion of the particular location on the substrate. The method further includes generating a third vector map comprising vectors reflecting reduced noise in distortions across the plurality of locations on the substrate and generating a fourth vector map projecting a direction component of each vector component in the third set of vectors to a radial direction. The method further includes generating a fifth vector map by grouping the vectors of the fourth set of vectors and determining a magnitude associated with each group of vectors.

Abstract: Methods, systems, and non-transitory computer readable medium are described for generating assessment maps for corrective action. A method includes receiving a first vector map including a first set of vectors each indicating a distortion of a particular location of a plurality of locations on a substrate. The method further includes generating a second vector map including a second set of vectors by rotating a position of each vector in the first set of vectors. The method further includes generating a third vector map including a third set of vectors based on vectors in the second set of vectors and corresponding vectors in the first set of vectors. The method further includes generating a fourth vector map by subtracting each vector of the third set of vectors from a corresponding vector in the first set of vectors. The fourth vector map indicates a planar component of the first vector map.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: An apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes are provided. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Abstract: Methods, systems, and non-transitory computer readable medium are described for generating assessment maps for corrective action. A method includes receiving a first vector map including a first set of vectors each indicating a distortion of a particular location of a plurality of locations on a substrate. The method further includes generating a second vector map including a second set of vectors by rotating a position of each vector in the first set of vectors. The method further includes generating a third vector map including a third set of vectors based on vectors in the second set of vectors and corresponding vectors in the first set of vectors. The method further includes generating a fourth vector map by subtracting each vector of the third set of vectors from a corresponding vector in the first set of vectors. The fourth vector map indicates a planar component of the first vector map.

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Abstract: A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.

Abstract: Techniques are disclosed for methods and apparatuses of an electrostatic chuck suitable for operating at high operating temperatures. In one example, a substrate support assembly is provided. The substrate support assembly includes a substantially disk-shaped ceramic body having an upper surface, a cylindrical sidewall, and a lower surface. The upper surface is configured to support a substrate thereon for processing the substrate in a vacuum processing chamber. The cylindrical sidewall defines an outer diameter of the ceramic body. The lower surface is disposed opposite the upper surface. An electrode is disposed in the ceramic body. A circuit is electrically connected to the electrode. The circuit includes a DC chucking circuit, a first RF drive circuit, and a second RF dive circuit. The DC chucking circuit, the first RF drive circuit and the second RF drive circuit are electrically coupled with the electrode.

Abstract: A battery-free electronic blood pressure measuring apparatus comprising a cuff (40), an airbag (22) to push air into the cuff (40), a power generation unit which has a generator (42) and an operating handle (28) coupled with the wall of the airbag (22) to generate electrical power, and a display device (44) to receive electrical power from the power generation unit, detect a blood pressure signal from the cuff (40), generate and display a blood pressure measurement. A method for electronically measuring blood pressure with a battery-free sphygmomanometer comprises pressing an airbag and a generator-driving structure attached to the airbag wall, which leads to electrical power generation and cuff inflation by the airbag at the same time, and measuring the blood pressure with the generated electrical power.

Abstract: A battery-free electronic blood pressure measuring apparatus comprising a cuff (40), an airbag (22) to push air into the cuff (40), a power generation unit which has a generator (42) and an operating handle (28) coupled with the wall of the airbag (22) to generate electrical power, and a display device (44) to receive electrical power from the power generation unit, detect a blood pressure signal from the cuff (40), generate and display a blood pressure measurement. A method for electronically measuring blood pressure with a battery-free sphygmomanometer comprises pressing an airbag and a generator-driving structure attached to the airbag wall, which leads to electrical power generation and cuff inflation by the airbag at the same time, and measuring the blood pressure with the generated electrical power.