Abstract: A copper plating structure and a package structure including the same are provided, and the copper plating structure includes at least one first copper layer and at least one second copper layer. The first copper layer includes a (111) crystal plane, wherein a proportion of the (111) crystal plane in each of the first copper layers is 36% to 100%. The second copper layer is located on the first copper layer and includes a non-(111) crystal plane or includes a (111) crystal plane and a non-(111) crystal plane, wherein a proportion of the (111) crystal plane in each of the second copper layers is 0% to 57%.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.

Abstract: Methods and apparatus for producing a copper layer on substrate in a flat panel display manufacturing process, where the copper is electrodelessly deposited on a substrate to form a copper interconnection layer. A copper solution containing: CuSO4 5H2O as a copper source, potassium sodium tartrate or trisodium citrate as a complexing agent, glyoxylate, glyoxilic acid or sodium phosphate as a reducing agent, a sulfur organic compound as a stabilizing agent, and a pH adjusting agent, is used to form the copper interconnection layer on the substrate.

Abstract: A do-it-yourself (DIY) thin film battery provides battery assembling components suitable for separate storage and easy fabrication. With through hole plating or sidewall plating, the current collectors of the anode and cathode, extend from one side of the substrates to the other to facilitate electric coupling with the electronic product outside. Through either soldering or direct contact with conductive tapes, the battery components mount with each other. Thus, the battery components can be combined to have batteries of various voltages and capacities via series or parallel connection means without extra circuits.

Abstract: A do-it-yourself (DIY) thin film battery provides battery assembling components suitable for separate storage and easy fabrication. With through hole plating or sidewall plating, the current collectors of the anode and cathode, extend from one side of the substrates to the other to facilitate electric coupling with the electronic product outside. Through either soldering or direct contact with conductive tapes, the battery components mount with each other. Thus, the battery components can be combined to have batteries of various voltages and capacities via series or parallel connection means without extra circuits.