Patents by Inventor Wenjin Shao
Wenjin Shao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11971501Abstract: A sensor module includes a sensor module main body having a rectangular board provided with a radio radar sensor function, and a metallic case having a rectangular parallelepiped box shape in which an opening part opened at one face in a thickness direction is formed and a cut-out opening for drawing out a cable connecting the sensor module main body is formed on a side face, the opening part being closed by the board inserted through the opening part with a component disposed on a front face of the board facing toward a bottom part on the inner side, and the cable is inserted into at least a part of the cut-out opening, and the cut-out opening is formed to be symmetrical with respect to a plane passing through the center of the metallic case and perpendicular to a plane of the cut-out opening.Type: GrantFiled: July 13, 2021Date of Patent: April 30, 2024Assignee: Lenovo (Singapore) Pte. Ltd.Inventors: Kazuhiro Kosugi, Yafeng Shao, Wenjin Niu, Yun Zhu
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Patent number: 10846442Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.Type: GrantFiled: July 16, 2018Date of Patent: November 24, 2020Assignee: ASML Netherlands B.V.Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
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Publication number: 20200189192Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: ApplicationFiled: February 21, 2020Publication date: June 18, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Wenjin SHAO, Ronaldus Johannes Gijsbertus GOOSSENS, Jun YE, James Patrick KOONMEN
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Patent number: 10569469Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: GrantFiled: October 28, 2014Date of Patent: February 25, 2020Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Wenjin Shao, Ronaldus Johannes Gijsbertus Goossens, Jun Ye, James Patrick Koonmen
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Patent number: 10137643Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.Type: GrantFiled: August 11, 2014Date of Patent: November 27, 2018Assignee: ASML NETHERLANDS B.V.Inventors: Yu Cao, Wenjin Shao, Ronaldus Johannes Gijsbertus Goossens, Jun Ye, James Patrick Koonmen
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Publication number: 20180322224Abstract: Methods provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.Type: ApplicationFiled: July 16, 2018Publication date: November 8, 2018Applicant: ASML NETHERLANDS B.V.Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
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Patent number: 10025198Abstract: The present invention generally relates to simulating a lithographic process, and more particularly to methods for smart selection and smart weighting when selecting parameters and/or kernels used in aerial image computation. According to one aspect, advantages in simulation throughput and/or accuracy can be achieved by selecting TCC kernels more intelligently, allowing highly accurate aerial images to be simulated using a relatively fewer number of TCC kernels than in the state of the art. In other words, the present invention allows for aerial images to be simulated with the same or better accuracy using much less simulation throughput than required in the prior art, all else being equal.Type: GrantFiled: November 9, 2009Date of Patent: July 17, 2018Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Wenjin Shao, Hanying Feng, Fei Du, Martin Snajdr
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Patent number: 10025885Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.Type: GrantFiled: January 5, 2015Date of Patent: July 17, 2018Assignee: ASML Netherlands B.V.Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
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Patent number: 9672301Abstract: The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.Type: GrantFiled: April 7, 2014Date of Patent: June 6, 2017Assignee: ASML NETHERLANDS B.V.Inventors: Yu Cao, Wenjin Shao, Jun Ye, Ronaldus Johannes Gijsbertus Goossens
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Patent number: 9588439Abstract: Embodiments of the present invention describe methods of selecting a subset of test patterns from an initial larger set of test patterns for calibrating a computational lithography model. An example method comprises: generating an information matrix for the initial larger set of test patterns, wherein the terms of the information matrix comprise one or more identified model parameters that represent a lithographic process response; and, executing a selection algorithm using terms of the information matrix to select the subset of test patterns that effectively determines values of the identified model parameters that contribute significantly in the lithographic process response, wherein the subset of test patterns characteristically represents the initial larger set of test patterns. The selection algorithm explores coverage relationships existing in the initial larger set of test patterns.Type: GrantFiled: December 20, 2011Date of Patent: March 7, 2017Assignee: ASML NETHERLANDS B.V.Inventors: Antoine Jean Bruguier, Yu Cao, Jun Ye, Wenjin Shao
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Publication number: 20150186557Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.Type: ApplicationFiled: January 5, 2015Publication date: July 2, 2015Applicant: ASML NETHERLANDS B.V.Inventors: Jun YE, Yu CAO, Hanying FENG, Wenjin SHAO
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Publication number: 20150045935Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: ApplicationFiled: October 28, 2014Publication date: February 12, 2015Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Wenjin SHAO, Ronaldus Johannes Gijsbertus GOOSSENS, Jun YE, James Patrick KOONMEN
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Patent number: 8942463Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.Type: GrantFiled: March 25, 2014Date of Patent: January 27, 2015Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Luoqi Chen, Antoine Jean Bruguier, Wenjin Shao
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Patent number: 8930172Abstract: Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features.Type: GrantFiled: November 10, 2009Date of Patent: January 6, 2015Assignee: ASML Netherlands B.V.Inventors: Jun Ye, Yu Cao, Hanying Feng, Wenjin Shao
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Publication number: 20140351773Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.Type: ApplicationFiled: August 11, 2014Publication date: November 27, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Wenjin SHAO, Ronaldus Johannes Gijsbertus GOOSSENS, Jun YE, James Patrick KOONMEN
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Patent number: 8887105Abstract: The preset invention provides methods, systems and computer program product for selection of an optimum set of patterns to calibrate a lithography model so that the model can predict imaging performance of a lithography apparatus/system more accurately and reliably without being prohibitively expensive in terms of using computational and metrology resources and time. The method is based on modeling sensitivity of the calibration patterns to measurement noise. In one aspect of the present invention, a method is disclosed, comprising: identifying a model of at least a portion of a lithographic process; identifying a set of patterns for calibrating the model; and, estimating measurement noise associated with the set of patterns.Type: GrantFiled: October 26, 2012Date of Patent: November 11, 2014Assignee: ASML Netherlands B.V.Inventors: Antoine Jean Bruguier, Wenjin Shao, Song Lan
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Patent number: 8874423Abstract: Systems and methods for tuning photolithographic processes are described. A model of a target scanner is maintained defining sensitivity of the target scanner with reference to a set of tunable parameters. A differential model represents deviations of the target scanner from the reference. The target scanner may be tuned based on the settings of the reference scanner and the differential model. Performance of a family of related scanners may be characterized relative to the performance of a reference scanner. Differential models may include information such as parametric offsets and other differences that may be used to simulate the difference in imaging behavior.Type: GrantFiled: October 28, 2013Date of Patent: October 28, 2014Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Wenjin Shao, Ronaldus Johannes Gijsbertus Goossens, Jun Ye, James Patrick Koonmen
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Patent number: 8806387Abstract: Systems and methods for process simulation are described. The methods may use a reference model identifying sensitivity of a reference scanner to a set of tunable parameters. Chip fabrication from a chip design may be simulated using the reference model, wherein the chip design is expressed as one or more masks. An iterative retuning and simulation process may be used to optimize critical dimension in the simulated chip and to obtain convergence of the simulated chip with an expected chip. Additionally, a designer may be provided with a set of results from which an updated chip design is created.Type: GrantFiled: May 29, 2009Date of Patent: August 12, 2014Assignee: ASML Netherlands B.V.Inventors: Yu Cao, Wenjin Shao, Ronaldus Johannes Gijsbertus Goossens, Jun Ye, James Patrick Koonmen
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Publication number: 20140208278Abstract: The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.Type: ApplicationFiled: April 7, 2014Publication date: July 24, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Wenjin SHAO, Jun YE, Ronaldus Johannes Gljsbertus GOOSSENS
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Publication number: 20140198972Abstract: A method for determining an image of a mask pattern in a resist coated on a substrate, the method including determining an aerial image of the mask pattern at substrate level; and convolving the aerial image with at least two orthogonal convolution kernels to determine a resist image that is representative of the mask pattern in the resist.Type: ApplicationFiled: March 25, 2014Publication date: July 17, 2014Applicant: ASML NETHERLANDS B.V.Inventors: Yu CAO, Luoqi CHEN, Antoine Jean BRUGUIER, Wenjin SHAO