Abstract: A preparation method for a one-dimensional Ni12P5/Ni2P polycrystalline heterostructure catalyst used for high-efficiency water oxidation is provided. In particular, nickel foam is used as a conductive carrier and a nickel source, sodium phosphite is used as a phosphorus source, and the one-dimensional polycrystalline heterostructure catalyst is synthesized therefrom by means of a two-step hydrothermal-phosphorization method. The combination of the one-dimensional heterostructure and the nickel foam conductive carrier is beneficial for charge transfer and the release of bubbles on the surface of an electrode/electrolyte. The prepared Ni12P5/Ni2P/NF catalyst has a relatively low electrocatalytic water oxidation overpotential and long-term stability in an alkaline solution. After the Ni12P5/Ni2P/NF is loaded with monatomic Ir, the water oxidation overpotential can be further reduced.

Abstract: The present invention relates to the technical fields of electrocatalysis and chemical industry, and specifically relates to an electrocatalytic water oxidation homogeneous diatomic catalyst, and a preparation method therefor and a use thereof. The catalyst comprises a carrier and a homogeneous diatomic active site having an adjacency structure, and the active site is anchored in the carrier; the carrier is at least one of an oxide, a hydroxide and an oxyhydroxide of a 3d transition-metal; a coordination structure is formed between the double atoms and the carrier. The intrinsic activity of a diatomic dispersed catalytic material prepared by the method in an electrocatalytic water oxidation reaction is equivalent to that of the existing natural photosynthetic system II having the highest efficiency, at the same time, the water oxidation initial potential is merely 170 mV, and the stability is kept for 650 h under a current density of 20 A cm?2; and the preparation method is simple and has low cost.

Abstract: This disclosure features chemical entities (e.g., a compound or a pharmaceutically acceptable salt, and/or hydrate, and/or cocrystal, and/or drug combination of the compound) that inhibit RNA polymerase I (Pol I). Said chemical entities are useful, e.g., for treating a condition, disease or disorder in which increased (e.g., excessive) Pol I activity contributes to the pathology and/or symptoms and/or progression of the condition, disease or disorder (e.g., cancer) in a subject (e.g., a human). This disclosure also features compositions containing the same as well as methods of using and making the same.

Abstract: This disclosure features chemical entities (e.g., a compound or a pharmaceutically acceptable salt, and/or hydrate, and/or cocrystal, and/or drug combination of the compound) that inhibit RNA polymerase I (Pol I). Said chemical entities are useful, e.g., for treating a condition, disease or disorder in which increased (e.g., excessive) Pol I activity contributes to the pathology and/or symptoms and/or progression of the condition, disease or disorder (e.g., cancer) in a subject (e.g., a human). This disclosure also features compositions containing the same as well as methods of using and making the same.

Abstract: This disclosure features chemical entities (e.g., a compound or a pharmaceutically acceptable salt, and/or hydrate, and/or cocrystal, and/or drug combination of the compound) that inhibit RNA polymerase I (Pol I). Said chemical entities are useful, e.g., for treating a condition, disease or disorder in which increased (e.g., excessive) Pol I activity contributes to the pathology and/or symptoms and/or progression of the condition, disease or disorder (e.g., cancer) in a subject (e.g., a human). This disclosure also features compositions containing the same as well as methods of using and making the same.

Abstract: Exemplary embodiments provide a wavelength tunable laser device and methods using the wavelength tunable laser device for a laser tuning. An exemplary wavelength tunable laser device can include an active gain element, a slot waveguide structure, and a wavelength tuning structure including heating elements disposed around the grating structure for a wavelength selection.

Abstract: In accordance with aspects of the present disclosure, a method is disclosed. The method includes controlling an operational wavelength of a wavelength tunable laser by receiving radiation from the laser at first photo-detector including a first optical element having a partially reflective coating on a front surface of the first optical element; receiving at least a portion of the radiation partially reflected from the front surface of the first optical element at an etalon; receiving radiation from the etalon at a second photo-detector including a second optical element having an anti-reflection coating on a front surface of the second optical element; determining, by processor, a control signal to be applied to the laser to control the operational wavelength of the radiation based on data from the first and the second photo-detectors; and transmitting the control signal to the laser to, control the operational wavelength of the radiation.

Abstract: A method and structure for mechanical self-alignment of semiconductor device features, for example multi-chip module features. Alignment of the features can be performed using mechanical alignment grooves within a layer of a first device and mechanical alignment pedestals of a second device. The alignment accuracy is limited by the patterning resolution of the semiconductor processing, which is in sub-micron scale. Flip-chip bonding can be used as the bonding process between chips to increase the alignment precision.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate. The structure may also include one or more conducting layers positioned on the substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.

Abstract: A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe of the SPM and a sample to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.

Abstract: A VCSEL structure is provided. The VCSEL structure comprises a substrate consisting of a III-V material. The structure may also include one or more conducting layers positioned on said substrate. There may be void spaces positioned between portions of the conducting layers to electrically isolate the portions. A method for fabricating the VCSEL structure is also provided.

Abstract: A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe of the SPM and a sample to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.

Abstract: A method of producing a probe device for a metrology instrument such as an AFM includes providing a substrate having front and back surfaces and then forming an array of tip height structures on the first surface of the substrate, the structures having varying depths corresponding to selectable tip heights. The back surface of the substrate is etched until a thickness of the substrate substantially corresponds to a selected tip height, preferably by monitoring this etch visually and/or monitoring the etch rate. The tips are patterned from the front side of the wafer relative to fixed ends of the cantilevers, and then etched using an anisotropic etch. As a result, probe devices having sharp tips and short cantilevers exhibit fundamental resonant frequencies greater than 700 kHz or more.

Abstract: Electromagnetic radiation detector elements and methods for detecting electromagnetic radiation, in particular, infrared radiation, are provided. The electromagnetic radiation detector element can include an electromagnetic radiation detector and a plasmonic antenna disposed over the electromagnetic radiation detector. The plasmonic antenna can include a metal film, a sub-wavelength aperture in the metal film, and a plurality of circular corrugations centered around the sub-wavelength aperture.

Abstract: Electromagnetic radiation detector elements and methods for detecting electromagnetic radiation, in particular, infrared radiation, are provided. The electromagnetic radiation detector element can include an electromagnetic radiation detector and a plasmonic antenna disposed over the electromagnetic radiation detector. The plasmonic antenna can include a metal film, a sub-wavelength aperture in the metal film, and a plurality of circular corrugations centered around the sub-wavelength aperture.