Patents by Inventor Wenkan Jiang

Wenkan Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH QUALITY GROUP-III METAL NITRIDE CRYSTALS, MEHODS OF MAKING, AND METHODS OF USE
    Publication number: 20140147650
    Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 29, 2014
    Applicant: SORAA, INC.
    Inventors: WENKAN JIANG, MARK P. D'EVELYN, DERRICK S. KAMBER, DIRK EHRENTRAUT, MICHAEL KRAMES
  • Large Area, Low-Defect Gallium-Containing Nitride Crystals, Method of Making, and Method of Use
    Publication number: 20140065360
    Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 6, 2014
    Applicant: Soraa, Inc.
    Inventors: Mark P. D'Evelyn, Dirk Ehrentaut, Wenkan Jiang, Bradley C. Downey