Patents by Inventor Wenli Z. Collison

Wenli Z. Collison has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040149223
    Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.
    Type: Application
    Filed: December 18, 2003
    Publication date: August 5, 2004
    Applicant: Lam Research Corporation
    Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
  • Patent number: 6692649
    Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.
    Type: Grant
    Filed: January 18, 2001
    Date of Patent: February 17, 2004
    Assignee: Lam Research Corporation
    Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
  • Publication number: 20010023741
    Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.
    Type: Application
    Filed: January 18, 2001
    Publication date: September 27, 2001
    Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang O. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin
  • Patent number: 6203657
    Abstract: A plasma processing module for processing a substrate includes a plasma containment chamber having a feed gas inlet port capable of allowing a feed gas to enter the plasma containment chamber of the plasma processing module during the processing of the substrate. An inductively coupled source is used to energize the feed gas and striking a plasma within the plasma containment chamber. The specific configuration of the inductively coupled source causes the plasma to be formed such that the plasma includes a primary dissociation zone within the plasma containment chamber. A secondary chamber is separated from the plasma containment chamber by a plasma containment plate. The secondary chamber includes a chuck and an exhaust port. The chuck is configured to support the substrate during the processing of the substrate and the exhaust port is connected to the secondary chamber such that the exhaust port allows gases to be removed from the secondary chamber during the processing of the substrate.
    Type: Grant
    Filed: March 31, 1998
    Date of Patent: March 20, 2001
    Assignee: Lam Research Corporation
    Inventors: Wenli Z. Collison, Michael S. Barnes, Tuqiang Q. Ni, Butch Berney, Wayne W. Vereb, Brian K. McMillin