Abstract: The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of Al2O3 is performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of Al2O3, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.

Abstract: The present invention relates to a highly reliable nonvolatile memory and a manufacturing method thereof. The nonvolatile memory comprises top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. The manufacturing method adopts a method in which a doping method and a double-layer forming method are combined, so that the highly reliable and highly uniform resistive random access memory can be fabricated and accordingly the performance of the memory can be increased.

Abstract: The present invention discloses an organic resistive random access memory and a preparation method thereof. The memory uses silicon as a substrate, and has a MIM capacitor structure having a vertical memory unit, where the MIM structure has a top electrode of Al, a bottom electrode of ITO, and an middle functional layer of parylene, wherein, a parylene layer as the functional layer is formed by performing deposition multiple times, where the deposition of Al2O3 is performed once by ALD between each two deposition of parylene. A critical region which is in favor of forming a conductive channel could be formed by controlling the deposition area of Al2O3, and further control the electrical characteristics of the memory. Through the present invention, the cycle-to-cycle and device-to-device uniformity could be effectively improved, without changing the basic structure of the memory.

Abstract: The present invention relates to a highly reliable nonvolatile memory and a manufacturing method thereof. The nonvolatile memory comprises top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. The manufacturing method adopts a method in which a doping method and a double-layer forming method are combined, so that the highly reliable and highly uniform resistive random access memory can be fabricated and accordingly the performance of the memory can be increased.