Patents by Inventor Wenlin GAO

Wenlin GAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Insulating layer structure for semiconductor product, and preparation method of insulating layer structure
    Patent number: 10748989
    Abstract: An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.
    Type: Grant
    Filed: December 7, 2018
    Date of Patent: August 18, 2020
    Assignee: Shenyang Silicon Technology Co., Ltd.
    Inventors: Wenlin Gao, Xiang Li, Qingchao Liu
  • INSULATING LAYER STRUCTURE FOR SEMICONDUCTOR PRODUCT, AND PREPARATION METHOD OF INSULATING LAYER STRUCTURE
    Publication number: 20190237540
    Abstract: An insulating layer structure for a semiconductor product. The insulating layer structure includes a device substrate, a supporting substrate and a thin film layer. The device substrate and the supporting substrate are silicon wafers. The thin film layer(s) is/are arranged on the device substrate or/and the supporting substrate. The device substrate and the supporting substrate are bonded together through the thin film layer arranged on at least one of the device substrate and the supporting substrate to form an integral multilayer SOI structure. The insulating layer structure formed by the present invention solves problems of serious spontaneous heating of an existing SOI device, severe warpage of an existing SOI structure caused by high-temperature annealing, a poor radio frequency characteristic and the like, and has a predictable relatively higher economic and social value.
    Type: Application
    Filed: December 7, 2018
    Publication date: August 1, 2019
    Applicant: Shenyang Silicon Technology Co., Ltd.
    Inventors: Wenlin GAO, Xiang LI, Qingchao LIU