Abstract: A storage system includes multiple storage nodes. Each storage node includes a first storage device of a first type and a second storage device of a second type, and a performance level of the first storage device is higher than the second storage device. The globe cache includes a first tier comprising the first storage device in each storage node, and a second tier comprising the second storage device in each storage node. The first tier is for storing data with a high access frequency, and the second tier is for storing data with a low access frequency. The management node monitors an access frequency of target data stored in the first tier. When the access frequency of the target data is lower than a threshold, the management node instructs the first storage node to migrate the target data from the first tier to the second tier.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: Apparatus and method for on-wafer burn-in of a semiconductor device. In a preferred embodiment, the present invention is realized using an auto-prober commonly used in scan-testing of semiconductor devices. Specifically, in one embodiment, the auto-prober is programmed to sequentially apply an elevated current to each semiconductor device on a wafer. During the application of the elevated current, which substantially exceeds the normal operating current of the device, performance characteristics of the device, including its output power, is detected and registered. Preferably, each device is subjected to multiple scans by the elevated current. The device's performance characteristics is then analyzed. If a device exhibits consistent power output over different scans, it is not likely to suffer from infant mortality. If the device exhibits a shift in power output over successive scans, the device is likely to run into early failure and should be rejected.

Abstract: This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.

Abstract: This invention relates to a method of improving the fabrication of etched semiconductor devices by using a patterned adhesion promoter layer over a hydrocarbon planarization material. More specifically, the present invention improves the bonding of a metal interconnect layer to a hydrocarbon planarization material, such as polyimide, by inserting an adhesion promotion layer, such as silicon nitride, between the hydrocarbon planarization material and the metal interconnect layer. A process for improving the fabrication of etched semiconductor devices, comprises the steps of: (1) depositing a hydrocarbon planarization material over a substrate; (2) depositing an adhesion promoter over the hydrocarbon planarization material; (3) defining a first mask and etching back the adhesion promoter so as to form an adhesion promoter pad over a portion of the hydrocarbon planarization material; and (4) depositing a first metal over the adhesion promoter pad.