Abstract: The present invention discloses a polypeptide and application thereof. By modifying oxyntomodulin (OXM), hybridizing OXM with a peptide sequence of Exenatide, including enabling the polypeptide to be resistant to DPP-4 enzyme degradation through amino acid modification, and conjugating fatty acid chains at the same time, an OXM hybrid peptide having longer pharmacologic action time and better weight losing effects is obtained. Synthesis of a target polypeptide is fast realized by an orthogonal protection strategy solid-phase synthesis method, and a crude product is purified and freeze-dried to obtain the OXM hybrid peptide.

Abstract: Disclosed are an ultrafast electric pulse generation and detection device and a use method thereof. The device includes a laser and an electric pulse generator. The electric pulse generator includes: a photoelectric material layer including an optically controlled switching region for responding to excitation light generated by the laser; an insulating layer formed on the photoelectric material layer, wherein a switch structure exists at a position of the insulating layer corresponding to the optically controlled switching region, so that the optically controlled switching region is partially exposed or completely exposed; transmission lines are formed on the insulating layer.

Abstract: Disclosed are a low-loss coplanar waveguide bonding structure and a manufacturing method thereof, relating to the technical field of semiconductor. The low-loss coplanar waveguide bonding structure includes: a first coplanar waveguide on a first substrate, a second coplanar waveguide on a second substrate and having a same structure as the first coplanar waveguide, and a plurality of two-dimensional heterostructures connecting conductors of the first coplanar waveguide and the second coplanar waveguide in a one-to-one correspondence, where the two-dimensional heterostructures includes: a two-dimensional conductive material layer for signal transmission and a two-dimensional dielectric material layer under the two-dimensional conductive material layer.

Abstract: A highly reliable STT-MRAM structure and an implementation method thereof are provided. The STT-MRAM structure includes: a memory block array, including a plurality of memory blocks; on-chip in-situ temperature sensors, for detecting an instantaneous temperature of each memory block; and a controller, which outputs a reading or writing operation signal based on the instantaneous temperature of each memory block detected by the on-chip in-situ temperature sensors, so as to modulate respective voltages and/or frequencies of reading and writing operations of each memory block. When the instantaneous temperature is too high, the voltages and/or frequencies of the reading and writing operations would be decreased, to the contrary when the instantaneous temperature is too low, the voltages and/or frequencies of the reading and writing operations would be increased, which expands a reliable working temperature range and lengthens a lifetime of the STT-MRAM structure.

Abstract: A highly reliable STT-MRAM structure and an implementation method thereof are provided. The STT-MRAM structure includes: a memory block array, including a plurality of memory blocks; on-chip in-situ temperature sensors, for detecting an instantaneous temperature of each memory block; and a controller, which outputs a reading or writing operation signal based on the instantaneous temperature of each memory block detected by the on-chip in-situ temperature sensors, so as to modulate respective voltages and/or frequencies of reading and writing operations of each memory block. When the instantaneous temperature is too high, the voltages and/or frequencies of the reading and writing operations would be decreased, to the contrary when the instantaneous temperature is too low, the voltages and/or frequencies of the reading and writing operations would be increased, which expands a reliable working temperature range and lengthens a lifetime of the STT-MRAM structure.

Abstract: A magnetic memory includes one or more magnetic tunnel junctions, a heavy metal or anti-ferromagnetic strip film, a first bottom electrode and a second bottom electrode. Every magnetic tunnel junction is located on the strip film and represents a memory cell; the first bottom electrode and the second bottom electrode are respectively connected with two ends of the heavy metal or anti-ferromagnetic strip film; every magnetic tunnel junction includes a first ferromagnetic metal, a first oxide, a second ferromagnetic metal, a first synthetic antiferromagnetic layer and an Xth top electrode from bottom to top in sequence, wherein X is a serial number of the memory cell. A data writing method combines spin orbit torque with spin transfer torque to write data, and respectively applies two currents to the magnetic tunnel junction and the heavy metal or anti-ferromagnetic strip film. Only one current is unable to complete data writing.

Abstract: A magnetic memory includes one or more magnetic tunnel junctions, a heavy metal or anti-ferromagnetic strip film, a first bottom electrode and a second bottom electrode. Every magnetic tunnel junction is located on the strip film and represents a memory cell; the first bottom electrode and the second bottom electrode are respectively connected with two ends of the heavy metal or anti-ferromagnetic strip film; every magnetic tunnel junction includes a first ferromagnetic metal, a first oxide, a second ferromagnetic metal, a first synthetic antiferromagnetic layer and an Xth top electrode from bottom to top in sequence, wherein X is a serial number of the memory cell. A data writing method combines spin orbit torque with spin transfer torque to write data, and respectively applies two currents to the magnetic tunnel junction and the heavy metal or anti-ferromagnetic strip film. Only one current is unable to complete data writing.