Patents by Inventor Wenpeng Chen

Wenpeng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6045888
    Abstract: An optical memory material includes a two-photon storage component which can be written from a first to a second state in response to WRITE light, mixed with a signal component which fluoresces by one-photon absorption only at the written locations in response to READ light. The storage material may be a fulgide. The memory material may also include a frequency upconversion material to aid writing. Writing is performed by a spatial light modulator (SLM) with a dynamic focussing system, for concentrating sufficient power at WRITE locations for nonlinear two-photon absorption. Crosstalk is avoided during simultaneous writing in some embodiments, by spacing the individual WRITE beams apart by an integer number of inter-beam spacings, so that non-adjacent datels are written simultaneously in a "paragraph," and the non-written areas are written at a different time with different paragraphs.
    Type: Grant
    Filed: May 12, 1995
    Date of Patent: April 4, 2000
    Assignee: Lockheed Martin Corporation
    Inventors: Wenpeng Chen, Shekhar Guha, Terrance L. Worchesky, Kenneth J. Ritter, Maher E. Tadros, Keith Kang
  • Patent number: 5472759
    Abstract: An optical memory material includes a two-photon storage component which can be written from a first to a second state in response to WRITE light, mixed with a signal component which fluoresces by one-photon absorption only at the written locations in response to READ light. The storage material may be a fulgide. The memory material may also include a frequency upconversion material to aid writing. Writing is performed by a spatial light modulator (SLM) with a dynamic focussing system, for concentrating sufficient power at WRITE locations for nonlinear two-photon absorption. Crosstalk is avoided during simultaneous writing in some embodiments, by spacing the individual WRITE beams apart by an integer number of inter-beam spacings, so that non-adjacent datels are written simultaneously in a "paragraph," and the non-written areas are written at a different time with different paragraphs.
    Type: Grant
    Filed: December 16, 1993
    Date of Patent: December 5, 1995
    Assignee: Martin Marietta Corporation
    Inventors: Wenpeng Chen, Shekhar Guha, Terrance L. Worchesky, Kenneth J. Ritter, Maher E. Tadros, Keith Kang
  • Patent number: 5018842
    Abstract: An optical power limiter and switch, transparent at low light intensity and opaque at high intensity, is comprised of a pair of right triangular prisms separated by a liquid film whose refractive index changes in response to optical energy. A first or input lens focuses the light upon the liquid film at an angle less than the critical angle of total reflection of the prism-liquid interface and a second or output lens refocuses the energy to a detector through an aperture. When the intensity of the optical energy reaches a first predetermined level, the optical energy is defocused and diverted from the detector. When the intensity of the optical energy reaches a second predetermined higher level, the critical angle is achieved whereupon the optical energy is reflected away from the interface rather than through it.
    Type: Grant
    Filed: April 7, 1988
    Date of Patent: May 28, 1991
    Assignee: Martin Marietta Corporation
    Inventor: Wenpeng Chen
  • Patent number: 4879479
    Abstract: The present invention relates to a device for optical switching, frequency conversion, and protection of sensory organs and optical and electronic sensors which comprises at least one layer comprising a polymerized transition metal poly-yne.
    Type: Grant
    Filed: August 5, 1987
    Date of Patent: November 7, 1989
    Assignee: Martin Marietta Corporation
    Inventors: Claude C. Frazier, Shekhar Guha, Wenpeng Chen
  • Patent number: 4617532
    Abstract: A semiconductor device is optically phase-locked by utilizing (1) the Burstein shift in differently doped semiconductor layers and injecting light having an energy level lower than the absorption edge of the heavily doped layer in which optical absorption is not desired and higher than the more lightly doped region where it is desired; and (2) the internal photoemission and injecting light having an energy level lower than the band gap of the semiconductor.
    Type: Grant
    Filed: April 30, 1984
    Date of Patent: October 14, 1986
    Assignee: Martin Marietta Corporation
    Inventors: Wenpeng Chen, Norman E. Byer