Patents by Inventor Wenping GENG

Wenping GENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
    Patent number: 10403348
    Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: September 3, 2019
    Assignee: Fudan University
    Inventors: Anquan Jiang, Wenping Geng
  • LARGE CURRENT-READOUT FERROELECTRIC SINGLE-CRYSTAL THIN FILM MEMORY AS WELL AS METHOD OF PREPARING THE SAME AND METHOD OF OPERATING THE SAME
    Publication number: 20180096717
    Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
    Type: Application
    Filed: April 12, 2016
    Publication date: April 5, 2018
    Applicant: Fudan University
    Inventors: Anquan JIANG, Wenping GENG
  • Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
    Patent number: 9685216
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Grant
    Filed: June 26, 2015
    Date of Patent: June 20, 2017
    Assignee: Fudan University
    Inventors: Anquan Jiang, Jun Jiang, Wenping Geng, Zilong Bai
  • NON-DESTRUCTIVE READOUT FERROELECTRIC MEMORY AS WELL AS METHOD OF PREPARING THE SAME AND METHOD OF OPERATING THE SAME
    Publication number: 20160358639
    Abstract: A non-destructive readout ferroelectric memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory are disclosed. The ferroelectric memory comprises a ferroelectric thin film layer. The ferroelectric memory of the invention can realize a non-destructive readout by way of current, is suitable for a high density application, is simple in preparation and has a low cost.
    Type: Application
    Filed: June 26, 2015
    Publication date: December 8, 2016
    Applicant: Fudan University
    Inventors: Anquan JIANG, Jun JIANG, Wenping GENG, Zilong BAI
  • Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the same
    Patent number: RE49620
    Abstract: Disclosed is a non-destructive large current-readout ferroelectric single-crystal thin film memory as well as a method of preparing the ferroelectric memory and a method of operating the ferroelectric memory. The large current-readout ferroelectric single-crystal thin film memory comprises a ferroelectric storage layer, which is a ferroelectric single-crystal storage layer. The non-destructive readout ferroelectric memory has a greatly increased read current in an on-state, and moreover, the data retention performance and data endurance performance are improved.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: August 22, 2023
    Assignee: Fudan University
    Inventors: Anquan Jiang, Wenping Geng