Patents by Inventor Wenqiang Song

Wenqiang Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11699696
    Abstract: A silicon-controlled rectifier includes a substrate of a first conductivity type; a deep well region of a second conductivity type; a well regions of the first conductivity type and the second conductivity type; a first, second and third heavily doped active regions of the first conductivity type; a first, second and third heavily doped active regions of the second conductivity type; and a first, second and third shallow trench isolation structures. A reverse diode formed in the third heavily doped active region of the second conductivity type and the well region of the first conductivity type is embedded, and a forward diode is formed in the heavily doped active region of the first conductivity type and the well region of the second conductivity type. By sharing the third heavily doped active region of the second conductivity type across the well regions of different conductivity types, two back-to-back diodes are formed.
    Type: Grant
    Filed: March 31, 2021
    Date of Patent: July 11, 2023
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Juin Jei Liou, Wenqiang Song, Ching-Sung Ho
  • Publication number: 20220293585
    Abstract: A silicon-controlled rectifier includes a substrate of a first conductivity type; a deep well region of a second conductivity type; a well regions of the first conductivity type and the second conductivity type; a first, second and third heavily doped active regions of the first conductivity type; a first, second and third heavily doped active regions of the second conductivity type; and a first, second and third shallow trench isolation structures. A reverse diode formed in the third heavily doped active region of the second conductivity type and the well region of the first conductivity type is embedded, and a forward diode is formed in the heavily doped active region of the first conductivity type and the well region of the second conductivity type. By sharing the third heavily doped active region of the second conductivity type across the well regions of different conductivity types, two back-to-back diodes are formed.
    Type: Application
    Filed: March 31, 2021
    Publication date: September 15, 2022
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Juin Jei Liou, Wenqiang Song, Ching-Sung Ho
  • Publication number: 20200258165
    Abstract: Disclosed in the present invention are a method for automatic classification of a bill, a storage medium, and a mobile terminal. The method comprises the steps of: obtaining, when detecting that a mobile terminal is performing mobile payment, current mobile payment information, a current geographical location of the mobile terminal, and store information at the current geographical location; and associating the current mobile payment information with the current store information, and then storing the information to implement automatic classification of a bill.
    Type: Application
    Filed: August 14, 2018
    Publication date: August 13, 2020
    Inventor: Wenqiang Song