Patents by Inventor Wenqing Wu

Wenqing Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170019153
    Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.
    Type: Application
    Filed: September 29, 2016
    Publication date: January 19, 2017
    Inventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
  • Publication number: 20170010864
    Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.
    Type: Application
    Filed: October 13, 2015
    Publication date: January 12, 2017
    Inventors: David JACOBSON, Xiaochun ZHU, Wenqing WU, Kendrick Hoy Leong YUEN, Seung KANG
  • Patent number: 9495899
    Abstract: Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: November 15, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Senthil Kumar Govindaswamy, Raghu Sagar Madala, Peiyuan Wang, Kendrick Hoy Leong Yuen, David Joseph Winston Hansquine
  • Publication number: 20160327075
    Abstract: A simple locking device includes a locking bracket, a locking tongue piece, a tension spring, a tension side wall, a base, at least two guide shafts, connection components and, wherein the locking bracket includes a lock piece, at least two guide holes and a retaining piece; the tension side wall is fixed to the base; and the at least two guide shafts respectively pass through the at least two guide holes to mount the locking bracket onto the base, such that the locking bracket is guided by the guide holes to move. The simple locking device may perform actions in multiple states by a single mechanism to lock up a movable device, thereby making the operation to be easier and more convenient and facilitating improving the user experience.
    Type: Application
    Filed: October 27, 2014
    Publication date: November 10, 2016
    Applicant: GRG Banking Equipment Co., Ltd.
    Inventors: Jiawu TAN, Wenqing WU, Zhuang JIANG, Zhiqiang SUN
  • Publication number: 20160304307
    Abstract: A banknote temporary storage device and a banknote storage method thereof are provided. The banknote storage device includes a signal collecting unit including a coded disk, a coded disk signal sensor and a rubber wheel, where the coded disk and the rubber wheel are arranged between the storage roller and the belt standby roller via a same rotating shaft, and the coiling belt tightly engages with the rubber wheel and drives the rotation of the rubber wheel. The real-time radius of the storage roller or the belt standby roller is obtained and the angular speed of the drive motor can be adjusted according to the real-time radius, thereby ensuring that the coiling belt uniformly moves at the target speed.
    Type: Application
    Filed: October 24, 2014
    Publication date: October 20, 2016
    Applicant: GRG Banking Equipment Co., Ltd.
    Inventors: Tao ZHANG, Wenqing WU, Zhiqiang SUN
  • Publication number: 20160276576
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Application
    Filed: June 1, 2016
    Publication date: September 22, 2016
    Inventors: William H. XIA, Wenqing WU, Kendrick H. YUEN, Abhishek BANERJEE, Xia LI, Seung H. KANG, Jung Pill KIM
  • Patent number: 9385305
    Abstract: A memory cell includes an elongated first electrode coupled to a magnetic tunnel junction (MTJ) structure and an elongated second electrode aligned with the elongated first electrode coupled to the MTJ structure. The elongated electrodes are configured to direct mutually additive portions of a switching current induced magnetic field through the MTJ. The mutually additive portions enhance switching of the MTJ in response to application of the switching current.
    Type: Grant
    Filed: February 19, 2013
    Date of Patent: July 5, 2016
    Assignee: QUALCOMM INCORPORATED
    Inventors: William H. Xia, Wenqing Wu, Kendrick H. Yuen, Abhishek Banerjee, Xia Li, Seung H. Kang, Jung Pill Kim
  • Patent number: 9384812
    Abstract: Systems and methods are directed to a three-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, with a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter cross-coupled with a second inverter. A first data value is read out from the slave stage during a read phase of the same clock cycle that a second data value is written into the master stage during a write phase. The three-phase NVFF includes three control signals, for controlling an initialization phase of the slave stage, the read phase, and the write phase.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: July 5, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Kendrick Hoy Leong Yuen, Karim Arabi
  • Patent number: 9324402
    Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: April 26, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi
  • Patent number: 9300295
    Abstract: Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: March 29, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Yaojun Zhang, Wenqing Wu, Kendrick Hoy Leong Yuen, Karim Arabi
  • Patent number: 9251883
    Abstract: Systems and methods are directed to a single-phase non-volatile flip-flop (NVFF), which includes a master stage formed from a dual giant spin Hall effect (GSHE)-magnetic tunnel junction (MTJ) structure, the dual GSHE-MTJ structure comprising a first GSHE-MTJ and a second GSHE-MTJ coupled between a first combined terminal and a second combined terminal, and a slave stage formed from a first inverter coupled to a second inverter. During a single clock cycle of a clock, a first data value is read out from the slave stage when a clock is in a high state and a second data value is written into the master stage, when the clock is in a low state. The first and second inverters are cross coupled in a latch configuration to hold the first data value as an output, when the clock is in the low state.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: February 2, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Kendrick Hoy Leong Yuen, Karim Arabi
  • Patent number: 9230627
    Abstract: Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).
    Type: Grant
    Filed: August 5, 2014
    Date of Patent: January 5, 2016
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Raghu Sagar Madala, Kendrick Hoy Leong Yuen, Karim Arabi
  • Publication number: 20150356806
    Abstract: A thickness measurement device for a sheet-type medium comprises: a fixing frame (1), used for installing and bearing the following parts and components; a reference shaft (2), having two ends installed on the fixing frame (1) through bearings, wherein a reference roller (21) is fixedly fitted on the reference shaft (2); a detection shaft (3), wherein at least one floating support frame (31) having one end capable of rotating freely around the detection shaft (3) is arranged on the detection shaft (3), and a detection roller (32) and a signal generator (33) are arranged on the floating support frame (31); an elastic pressing plate (4), for pressing against the floating support frame (31) to keep an approaching trend between the detection roller (32) and the reference roller (21), wherein the elastic pressing plate (4) is composed of at least two elastic sheets; a signal sensor (5); and a data processing unit.
    Type: Application
    Filed: July 3, 2013
    Publication date: December 10, 2015
    Applicant: GRG BANKING EQUIPMENT CO., LTD.
    Inventors: Qi Xie, Wenqing Wu, Xing Hu, Tianrui Li
  • Patent number: 9189201
    Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: November 17, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: David M. Jacobson, Xiaochun Zhu, Wenqing Wu, Kendrick Hoy Leong Yuen, Seung H. Kang
  • Patent number: 9174183
    Abstract: The invention provides a fluidized bed polymerization reactor, including: a column, in which a liquid distributor and a gas distributor above the liquid distributor are arranged, so that the reaction zone being divided into a first zone and a second zone through the gas distributor; and a circulating unit for circulating the gas material originated from the top zone of the column into the bottom zone thereof in a form of gas-liquid mixture. The gas-liquid mixture is undergone a gas-liquid separation in the bottom zone, the gas phase portion obtained being fed to the gas distributor and then into the second zone while the liquid phase portion obtained being entered into the first zone through the liquid distributor, so that the temperature in the first zone is lower than that in the second zone. Therefore, polymer with a molecular weight distributed in a relatively wide range can be obtained. The invention further provides a method for preparing polymer.
    Type: Grant
    Filed: September 29, 2011
    Date of Patent: November 3, 2015
    Assignees: China Petroleum & Chemical Corporation, Zhejiang University, Sinopec Engineering Incorporation
    Inventors: Wenqing Wu, Yongrong Yang, Guanghai Luo, Jingdai Wang, Binbo Jiang, Shufang Wang, Guodong Han
  • Patent number: 9164729
    Abstract: A method and apparatus for generating random binary sequences from a physical entropy source having a state A and a state B by detecting whether the physical entropy source is in the state A or in the state B, attempting to shift the state of the physical entropy source to the opposite state in a probabilistic manner with less than 100% certainty, and producing one of four outputs based on the detected state and the state of the physical entropy source before the attempted shift. The outputs are placed in first and second queues and extracted in pairs from each queue. Random binary bits are output based on the sequences extracted from each queue.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: October 20, 2015
    Assignee: QUALCOMM INCORPORATED
    Inventors: Wenqing Wu, Peiyuan Wang, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Robert P. Gilmore, Jung Pill Kim, Seung H. Kang
  • Patent number: 9147454
    Abstract: A magnetic tunneling junction non-volatile register with feedback for robust read and write operations. In an embodiment, two MTJ devices are configured to store a logical 0 or a logical 1, and are coupled to drive an output node to a voltage indicative of the stored logical 0 or a logical 1. The output of a D flip-flop is fed to the two MTJ devices so that the state of the D flip-flop may be stored in the two MTJ devices during a store operation. During a read operation, the D flip-flop outputs the state of the two MTJ devices. Read disturbances are mitigated with the use of an edge detector coupled to the output node, so that a LOW voltage is provided to the D flip-flop if a rising voltage at the output node is detected.
    Type: Grant
    Filed: March 11, 2013
    Date of Patent: September 29, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Zhenyu Sun, Raghu Sagar Madala, Senthil Kumar Govindaswamy, Kendrick H. Yuen, Wenqing Wu, Peiyuan Wang
  • Patent number: 9135976
    Abstract: A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: September 15, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Wenqing Wu, Kendrick Hoy Leong Yuen, Xiaochun Zhu, Seung Hyuk Kang, Matthew Michael Nowak, Jeffrey Alexander Levin, Robert P. Gilmore, Nicholas Ka Ming Yu
  • Patent number: 9120089
    Abstract: An inorganic/organic composite support includes an inert inorganic material, a complex compound composed of a polylol and a magnesium halide, and an organic polymer containing a polar functional group. Said complex compound loaded with the organic polymer is deposited on the inert inorganic material. When the inorganic/organic composite support used as a polyolefin catalyst carrier is applied to ethene or propylene polymerization, the fusion-flow ratio of the obtained polymerisate is remarkably increased and its processing performance is improved. When the catalyst is applied to ethene polymerization, the fusion-flow ratio of the polymerisate can be adjusted by changing the content of hydrogen. When the catalyst is applied to ethene or propylene polymerization, the catalyst activity is high.
    Type: Grant
    Filed: April 15, 2010
    Date of Patent: September 1, 2015
    Assignees: China Petroleum & Chemical Corporation, Zhejieng University
    Inventors: Yongrong Yang, Wenqing Wu, Jingdai Wang, Lijun Du, Wei Li, Lina Fan, Binbo Jiang, Zhengliang Huang
  • Patent number: 9110746
    Abstract: Embodiments of the disclosure are directed to generating a random number. An embodiment of the disclosure passes a current from a read operation through a magnetic tunnel junction (MTJ) to cause a first magnetization orientation of a free layer to switch to a second magnetization orientation, the switch in magnetization orientation causing a change in a resistance of the MTJ, and periodically samples the resistance of the MTJ to generate a bit value for the random number.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: August 18, 2015
    Assignee: QUALCOMM Incorporated
    Inventors: Xiaochun Zhu, Wenqing Wu, David M. Jacobson, Seung H. Kang, Kendrick H. Yuen