Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: A soldering apparatus and a soldering method using the same are provided. The soldering apparatus includes a light source configured to supply light radiation required for soldering; and a mask disposed on the light path of the light source and including a light-shielding portion and multiple light-transmissive portions. The multiple light-transmissive portions are spaced apart by the light-shielding portion and are configured for the light radiation to pass through. The mask has different transmittances so that the magnitude of the light power irradiated on a substrate can be controlled. Therefore, devices can not only be soldered in batches but also be prevented from being damaged caused by inconsistent requirements on light powers.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.

Abstract: Disclosed are a display module and a manufacturing method therefor. The display module comprises: a substrate provided with an LED chip; an encapsulating layer for encapsulating the LED chip, wherein the encapsulating layer covers the substrate and the LED chip, and an ink color layer, which covers the encapsulating layer, wherein the surface roughness of the side of the ink color layer that faces away from the encapsulating layer is Ra<1 micron, and Rz<2 microns.

Abstract: Provided are a display module and a manufacturing method therefor, an LED display panel and an LED display apparatus. The display module includes a board, a pixel unit array, an encapsulation layer and a black ink layer. The board has a front surface and a back surface. The pixel unit array is disposed on the front surface of the board. The encapsulation layer covers the region where the pixel unit array is located. A side surface of the encapsulation layer forms a slope surface at an edge of the front surface of the board. The black ink layer covers the encapsulation layer.

Abstract: A LED display module includes multiple pixel rows. A first pixel row includes a plurality of first pixel units. Each of the plurality of first pixel units includes a first sub-pixel, a second sub-pixel, and a third sub-pixel. Sub-pixels of the plurality of first pixel units form at least one first sub-pixel row. A first row of the at least one first sub-pixel row includes at least two types of the first sub-pixel, the second sub-pixel, and the third sub-pixel. A last pixel row includes multiple second pixel units. Each of the plurality of second pixel units includes a first sub-pixel, a second sub-pixel,and a third sub-pixel. Sub-pixels of the plurality of second pixel units form at least one second sub-pixel row.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride or an indium tin oxide; and the electrode layer is located on the second-type layer.

Abstract: Disclosed are a light emitting diode and a method for manufacturing a light emitting diode. The light emitting diode includes a first-type layer, a light emitting layer, a second-type layer and an electrode layer; the first-type layer includes a first-type gallium nitride; the light emitting layer is located on the first-type layer; the light emitting layer includes a quantum point; the second-type layer is located on the light emitting layer; the second-type layer includes a second-type gallium nitride; and the electrode layer is located on the second-type layer.

Abstract: A laser lift-off integrated apparatus includes a laser light source configured to perform laser lift-off on a wafer to undergo lift-off, a lift-off chamber configured to bear the wafer to undergo lift-off, a heater configured to provide temperature required by the wafer to undergo lift-off during a lift-off process, a profile measuring device configured to acquire surface profile information of the wafer to undergo lift-off, and a movable device configured to, according to the surface profile information acquired by the profile measuring device, adjust a height of the wafer to undergo lift-off such that a focus of the laser light source is at a position where the wafer to undergo lift-off is to undergo lift-off.