Abstract: A semiconductor package and the method of forming the same are provided. The semiconductor package may include a substrate, an integrated circuit package component having a semiconductor die bonded to the substrate, and a ring structure on the substrate, wherein the ring structure may encircle the integrated circuit package component in a top-down view. The ring structure may comprise a first attached segment, a second attached segment attached to the substrate by an adhesive, and a first suspended segment between the first attached segment and the second attached segment. The first suspended segment may be suspended over the substrate. The first attached segment and the second attached segment may be spaced apart from the package component by a first distance and a second distance, respectively. The first suspended segment may be spaced apart from the package component by a third distance different from the first distance and the second distance.

Abstract: A semiconductor package module includes a package, a conductive layer, and a heat dissipating module. The package includes a semiconductor die. The conductive layer is disposed over the package. The heat dissipating module is disposed over the conductive layer, and the package and the heat dissipating module prop against two opposite sides of the conductive layer, where the heat dissipating module is thermally coupled to and electrically isolated from the package through the conductive layer.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: A semiconductor structure includes a circuit substrate, a semiconductor die, and a cover. The semiconductor die is disposed on the circuit substrate. The cover is disposed over the semiconductor die and over the circuit substrate. The cover comprises a lid portion and a support portion. The structure includes a first adhesive bonding the support portion to the circuit substrate and a second adhesive bonding the support portion and the lid portion.

Abstract: A semiconductor package module includes a package, a conductive layer, and a heat dissipating module. The package includes a semiconductor die. The conductive layer is disposed over the package. The heat dissipating module is disposed over the conductive layer, and the package and the heat dissipating module prop against two opposite sides of the conductive layer, where the heat dissipating module is thermally coupled to and electrically isolated from the package through the conductive layer.

Abstract: A semiconductor package includes a first component, a second component, and a stiffener rib. The first component is disposed on a substrate. The second component is disposed aside the first component and on the substrate. The stiffener rib is disposed between the first component and the second component. The lid is attached to the stiffener rib, the first component and the second component. The lid includes a recess portion on the stiffener rib. A first sidewall and a second sidewall of the recess portion laterally surround the stiffener rib. A first top space between a first top sidewall of the stiffener rib and the first sidewall of the recess portion is greater than a second top space between a second top sidewall of the stiffener rib and the second sidewall of the recess portion.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.

Abstract: A semiconductor package includes a chip package disposed on a substrate, a plurality of electronic components disposed aside the chip package on the substrate and a stiffener structure disposed on the substrate. The stiffener structure includes a stiffener ring surrounding the chip package and the plurality of electronic components, a stiffener rib between the chip package and the plurality of electronic components, wherein the stiffener rib includes a first portion and a second portion on the first portion, and a width of the second portion is greater than a width of the first portion. The semiconductor package further includes a lid attached to the stiffener structure, the chip package and the plurality of electronic components. A method of forming the semiconductor package is also provided.

Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a metallic cover. The semiconductor package is disposed on the circuit substrate. The metallic cover is disposed over the semiconductor package and over the circuit substrate. The metallic cover comprises a cap and outer flanges. The cap overlies the semiconductor package. The outer flanges are disposed at edges of the cap, are connected with the cap, and extend towards the circuit substrate. A region of the bottom surface of the cap has a curved profile matching a warpage profile of the semiconductor package and the circuit substrate, and the region having the curved profile extends over the semiconductor package.

Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.

Abstract: A manufacturing method of a semiconductor package includes the following steps. A package structure is provided over a substrate. A thermal interface layer is provided over the package structure. A lid structure is provided over the substrate, wherein the lid structure comprises a main body in contact with the package structure through the thermal interface layer and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.

Abstract: A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

Abstract: An apparatus for manufacturing packaged semiconductor devices includes a lower plate having package platforms and clamp guide pins to align an upper plate with the lower plate, and a boat tray having windows configured to receive package devices, and a plurality of upper plates configured to be aligned to respective windows and respective package platforms. Clamping force can be applied by fasteners configured to generate a downward force upon the upper plate. Package devices on the platforms are thus subjected to a clamping force. Load cells measure the clamping force so adjustments can be made.

Abstract: A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.

Abstract: A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.

Abstract: In an embodiment, a device includes: an integrated circuit package including: a package component; and a package stiffener attached to the package component; and a heat spreader attached to the integrated circuit package, a main portion of the heat spreader disposed above the package stiffener, a protruding portion of the heat spreader extending through the package stiffener; an elastic adhesive material between the main portion of the heat spreader and the package stiffener; and a thermal interface material between the protruding portion of the heat spreader and the package component, the thermal interface material different from the elastic adhesive material.

Abstract: In an embodiment, a method includes: attaching a package component to a package substrate, the package component includes: a first die being disposed over an interposer; a second die being disposed over the interposer and laterally adjacent to the first die; and an encapsulant being disposed around the first die and the second die; attaching a thermal interface material to the first die and the second die; and attaching a lid structure to the package substrate, the lid structure includes: a lid cap being disposed over the thermal interface material; and a plurality of lid feet connecting the lid cap to the package substrate, in a plan view the plurality of lid feet forming a discontinuous loop around the package component.

Abstract: A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is disposed on the substrate. The lid structure is disposed over substrate, wherein the lid structure includes a main body covering and surrounding the package structure and a plurality of rib portions protruded from the main body and extended toward the package structure.

Abstract: A package structure includes a substrate, a semiconductor package disposed over the substrate, a first lid structure disposed over the substrate, and a second lid structure disposed over the semiconductor package and the first lid structure. The first lid structure includes an opening exposing a region of the semiconductor package. A thermal interface material is disposed between the second lid structure and the semiconductor package, and a phase change adhesive is disposed between the second lid structure and the first lid structure.