Patents by Inventor Wensheg Qian

Wensheg Qian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a MIM capacitor
    Patent number: 6825080
    Abstract: A method of manufacturing a MIM capacitor which is characterized as follows. We provide a semiconductor structure having a first region and a capacitor region. Next we form a first conductive layer over the semiconductor structure. The first conductive layer is patterned to form a plurality of trenches in the capacitor region. We form a capacitor dielectric layer over the first conductive layer. We form a top plate over the capacitor dielectric layer in the capacitor region. The first conductive layer in the first region is patterned to form conductive patterns and a bottom plate. An interlevel dielectric layer is formed over the first conductive layer and top plate.
    Type: Grant
    Filed: October 2, 2003
    Date of Patent: November 30, 2004
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Bin Yang, Sanford Chu, Wensheg Qian, Tan Li Jia, Chang Chuan Hu