Abstract: The present invention discloses a coordinated parking-monitoring system. A co-monitored parking space is monitored by at least two parking-monitoring devices. Its effective parking-monitoring area is substantially more than that if it were monitored by a single parking-monitoring device. This lowers the overall system cost.

Abstract: The present invention discloses a coordinated parking-monitoring system. A co-monitored parking space is monitored by at least two parking-monitoring devices. Its effective parking-monitoring area is substantially more than that if it were monitored by a single parking-monitoring device. This lowers the overall system cost.

Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

Abstract: A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.

Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

Abstract: A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.

Abstract: A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.

Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

Abstract: The semiconductor device has an insulation layer formed over a semiconductor substrate, a conductor plug 46 buried in the insulation layer, a capacitor formed above the insulation layer and the conductor plug and including a lower electrode formed of the first conduction film and the second conduction film formed over the first conduction film and formed of Pt, Pt alloy, Pd or Pd alloy, a capacitor dielectric film formed of a ferroelectric or a high dielectric formed over the lower electrode and an upper electrode formed over the capacitor dielectric film, the capacitor dielectric film contains a first element of Pb or Bi, and the concentration peak of the first element diffused in the lower electrode from the capacitor dielectric film positioning in the interface between the first conduction film and the second conduction film.

Abstract: A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region in the base; and a logic circuit region connected to the memory cell region, the logic circuit including a first capacitor. The first capacitor includes: a first bottom electrode, a part of a lower surface of the first bottom electrode being in contact with the first conductive plug; a first insulating film on the first bottom electrode; and a first top electrode on the first insulating film. The first top electrode is spaced apart from the first conductive plug in planar view.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.

Abstract: A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base of a capacitor are prevented from being abnormally oxidized. A capacitor is formed by layering a lower electrode, a dielectric film including a ferroelectric substance or a high dielectric substance, and an upper electrode in this order on top of an interlayer insulation film with at least a conductive oxygen barrier film in between, and at least a portion of a side of the conductive oxygen barrier film is covered with an oxygen entering portion or an insulating oxygen barrier film.

Abstract: A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.

Abstract: A method of manufacturing a semiconductor device includes: forming a conductive film over a semiconductor substrate; forming a first ferroelectric film over the conductive film; forming an amorphous second ferroelectric film over the first ferroelectric film; forming a transition metal oxide material film containing ruthenium over the second ferroelectric film; forming a first conductive metal oxide film over the transition metal oxide material film without exposing the transition metal oxide material film to the air; annealing and crystallizing the second ferroelectric film; and patterning the first conductive metal oxide film, the first ferroelectric film, the second ferroelectric film, and the conductive film to form a ferroelectric capacitor.

Abstract: A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.

Abstract: A lower electrode film is formed above a substrate. A ferroelectric film is formed above the lower electrode film. An amorphous intermediate film of a perovskite-type conductive oxide is formed above the ferroelectric film. A first upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the intermediate film. The intermediate film is crystallized by carrying out a first heat treatment in an atmosphere containing an oxidizing gas after the formation of the first upper electrode film. After the first heat treatment, a second upper electrode film comprising oxide of at least one metal selected from a group of Pt, Pd, Rh, Ir, Ru, and Os is formed on the first upper electrode film, at a temperature lower than the growth temperature for the first upper electrode film.

Abstract: Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

Abstract: A method of manufacturing a semiconductor device comprising the steps of: forming a first interlayer insulating film over a substrate; forming a first conductive film over the first interlayer insulating film; forming a ferroelectric film on the first conductive film; forming a second conductive film on the ferroelectric film; forming an upper electrode of a capacitor by patterning the second conductive film; forming a capacitor dielectric film by patterning the ferroelectric film; and forming a lower electrode of the capacitor by patterning the first conductive film, wherein forming the first conductive film includes: forming a lower conductive layer made of a noble metal other than iridium over the first interlayer insulating film; and forming an upper conductive layer on the lower conductive layer, the upper conductive layer being made of a conductive material, which is different from a material for the lower conductive layer, and which is other than platinum.