Abstract: A dual-stage exchange system for a lithographic apparatus comprises a silicon chip stage (13) operating in an exposure workstation (3) and a silicon chip (14) stage operating in a pre-processing workstation (4). The two silicon chip stages (13, 14) are provided on the same base stage (1), and suspended on an upper surface (2) of the base stage by air bearings. The two silicon chip stages (13, 14) can move along guide rails (15, 16) in the Y direction. One end of each guide rail (15, 16) is connected to a main driving unit (11, 12), and the other end of each guide rail (15, 16) is butt-jointed with an X-direction single-freedom auxiliary driving unit (7, 8). The silicon chip stages (13, 14) are driven by the single-freedom auxiliary driving units (7, 8) cooperated with the main driving units (11, 12) to move along the X direction.

Abstract: A micro stage with 6 degrees of freedom used in super-precise processing and sensing equipment fields is disclosed. The micro stage has three sets of electromagnetic driving units arranged in a horizontal plane for driving the micro stage to obtain movements within the horizontal plane with 3 degrees of freedom in X, Y and ?z directions and three electromagnetic driving units arranged in a vertical direction for driving the micro stage to obtain additional movements with 3 degrees of freedom in Z, ?x and ?y directions. Direct driving by electromagnetic force is used in the invention. The invention is also applicable in super-precise processing and sensing fields for achieving 6 degree-of-freedom motions. The micro stage, which operates on the basis of Lorentz Law, provides a linear relation between the output pushing force and the input electrical current.

Abstract: A dual-stage switching system for lithographic machine includes a wafer stage to be operated in an exposure station and another wafer stage to be operated in a pre-processing station. The two wafer stages are provided on a base, with four 2-DOF driving units capable of moving along X direction and Y direction being provided along the edge of the base, and the wafer stages being disposed in a space surrounded by the four 2-DOF driving units and suspended on an upper surface of the base by air bearings. Each of the 2-DOF driving units includes upper and lower linear guides and a guiding sleeve, with the upper and lower linear guides being installed vertical to each other in their corresponding guiding sleeve. Two adjacent 2-DOF driving units cooperatively drive the wafer stage) to move in the X direction and Y direction.

Abstract: A micro stage with 6 degrees of freedom used in super-precise processing and sensing equipment filed is disclosed. The micro stage has three sets of electromagnetic driving units arranged in a horizontal plane for driving the micro stage to obtain movements within the horizontal plane with 3 degrees of freedom in X, Y and ?z directions and three electromagnetic driving units arranged in a vertical direction for driving the micro stage to obtain additional movements with 3 degrees of freedom in Z, ?x and ?y directions. Direct driving by electromagnetic force is used in the invention, resulting in advantages over stacked structures of having a simple structure, a compact profile, a low driven weight center, low stator inertia, etc. Thus, there is no mechanical friction and damping, and high displacement resolution can be provided. The positioning error of a wafer table of a lithographic machine can be compensated, and the leveling and focusing of the lithographic machine can be achieved.

Abstract: According to the invention, configurations of X-windings and Y-windings in a synchronous permanent planar motor are improved, X-windings and Y-windings overlap in the direction normal to the planar magnet array and distribute on the entire surface of the thrust core, such that effective wires in the X-windings and Y-windings are lengthened and increased in number, therefore the electromagnetic force generated by the SPMPM of this invention is increased correspondingly; X-windings and Y-windings are mounted on a thrust core made of iron material, thus the electromagnetic force is further increased; in addition, two separated anti-yawing member are provided on the mover for counteracting yawing of the mover, accordingly interference between anti-yawing torque and the electromagnetic force for propelling is eliminated.

Abstract: This invention discloses a scanning mechanism of an ion implanter. The mechanism is a PR-PRR type parallel mechanism with two subchains and two DOFs, driving the wafer holder to scan when the first subchain and the second subchain are translated in the same direction at the same speed and adjusting the rotational angle of the wafer holder when the first moving link (30) and the second moving link (32) in the first subchain and the second subchain have different translation amounts in the same direction or opposite directions. The driving motor for the scanning mechanism is provided outside the implant chamber. The invention also solves problems like low rigidity and large accumulation errors of existing serial scanning mechanisms and the effect of the electromagnetic field of the motor within the ion implant chamber on the trajectory of the ion beam.

Abstract: According to the invention, configurations of X-windings and Y-windings in a synchronous permanent planar motor are improved, X-windings and Y-windings overlap in the direction normal to the planar magnet array and distribute on the entire surface of the thrust core, such that effective wires in the X-windings and Y-windings are lengthened and increased in number, therefore the electromagnetic force generated by the SPMPM of this invention is increased correspondingly; X-windings and Y-windings are mounted on a thrust core made of iron material, thus the electromagnetic force is further increased; in addition, two separated anti-yawing member are provided on the mover for counteracting yawing of the mover, accordingly interference between anti-yawing torque and the electromagnetic force for propelling is eliminated.

Abstract: This invention discloses a scanning mechanism of an ion implanter. The mechanism is a PR-PRR type parallel mechanism with two subchains and two DOFs, driving the wafer holder to scan when the first subchain and the second subchain are translated in the same direction at the same speed and adjusting the rotational angle of the wafer holder when the first moving link (30) and the second moving link (32) in the first subchain and the second subchain have different translation amounts in the same direction or opposite directions. The driving motor for the scanning mechanism is provided outside the implant chamber. The invention also solves problems like low rigidity and large accumulation errors of existing serial scanning mechanisms and the effect of the electromagnetic field of the motor within the ion implant chamber on the trajectory of the ion beam.