Abstract: The disclosure discloses a liquid crystal panel, comprising an array substrate and a color filter substrate arranged opposite to a cell, the color filter substrate comprising a black matrix, the black matrix comprising a first portion in a display area and a second portion in a non-display area, wherein a second portion of the black matrix is provided with a groove surrounding the display area, the groove penetrates the second portion of the black matrix in a thickness direction of the second portion of the black matrix, a light resistance layer of two colors is arranged in the second portion of the black matrix to close an opening of the groove, and the resistance material layers of two colors are selected from any two of a red light resistance layer, a green resistance material layer and a blue color resistance material layer

Abstract: The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.

Abstract: The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure, as manufacturing the gate, a plurality of metal sections distributed in spaces are formed at two sides of the gate, and the gate and the plurality of metal sections are employed to be a mask to implement ion implantation to the polysilicon layer. In the TFT substrate structure according to the present invention, the undoped areas are formed among the n-type heavy doping areas while forming the n-type heavy doping areas at the polysilicon layer.

Abstract: The present invention provides a manufacture method of a TFT substrate structure and a TFT substrate structure. In the manufacture method of the TFT substrate structure according to the present invention, by adjusting the parameter of etching as manufacturing the gate, the angular surfaces are formed at the two sides of the gate, and the gate is used to be a mask to implement ion implantation to the polysilicon layer to form the n-type heavy doping area and the n-type light doping area are formed at the polysilicon layer at the same time. In the TFT structure according to the present invention, the polysilicon layer comprises n-type heavy doping areas at two sides and n-type light doping areas between the channel area of the polysilicon layer and the n-type heavy doping areas.