Patents by Inventor Wentao XU

Wentao XU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12278113
    Abstract: Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns are formed on the first sacrificial layer through a self-aligned process; a doping process is performed, which includes the operation that a region of the first sacrificial layer exposed from gaps between the second hard mask patterns is doped; the second hard mask patterns are removed; and an undoped region of the first sacrificial layer is removed through a selective etching process so as to form first sacrificial patterns.
    Type: Grant
    Filed: September 22, 2022
    Date of Patent: April 15, 2025
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Zhaohui Wang, Wentao Xu, Qiao Li
  • Publication number: 20250003558
    Abstract: Chemically and thermally stable covalent organic framework (COF) materials are configured and operative as solid adsorbents for capturing gases and water.
    Type: Application
    Filed: June 26, 2022
    Publication date: January 2, 2025
    Applicant: The Regents of the University of California
    Inventors: Omar M. Yaghi, Ha L. Nguyen, Steven J. Lyle, Nikita Hanikel, Hao Lyu, Wentao Xu
  • Patent number: 12105666
    Abstract: A computing system may implement a method for creating a first subdomain by configuring one of a first plurality of slave nodes as a first subdomain master node and configuring one or more other slave nodes of the first plurality of slave nodes as first subdomain slave nodes to the first subdomain master node.
    Type: Grant
    Filed: April 19, 2021
    Date of Patent: October 1, 2024
    Assignees: Advanced Micro Devices, Inc., ATI Technologies ULC
    Inventors: Shijie Che, Wentao Xu, Randall Brown, Vaibhav Amarayya Hiremath, Manuchehr Taghi-Loo
  • Patent number: 12031984
    Abstract: A detection device using a lateral flow strip for detection and a detection method thereof are provided, which relates to the technical field of a detection device using a lateral flow strip. An upper rotor, a middle rotor and a lower rotor are respectively provided with upper paddle(s), middle paddle(s) and lower paddle(s) along respective circumferential directions. Each upper paddle is provided with a test tube with openings at both ends thereof for placing the lateral flow strip. The middle paddle blocks a bottom one of the openings of the test tube. Each lower paddle is provided with a sample tube for placing sample solution. The bottom opening of the test tube is opposite to a top opening of the sample tube up and down.
    Type: Grant
    Filed: October 27, 2021
    Date of Patent: July 9, 2024
    Assignee: CHINA AGRICULTURAL UNIVERSITY
    Inventors: Nan Cheng, Xiaoyun He, Wentao Xu, Kunlun Huang, Yunbo Luo, Qian Zhang, Qingliang Liu
  • Publication number: 20240166045
    Abstract: A vehicle operating apparatus including a stressed means configured to receive a force applied thereon by a driver for operating a vehicle; a connecting means configured such that a first end is mechanically connected to the stressed means and a second end is mechanically connected to a mounting surface of the vehicle; a sensor configured to sense information associated with the force applied by the driver and convert the information into an electrical signal, the vehicle is able to perform driving-related operations in response to the signal; and an actuating means configured to actuate the connecting means according to a current driving state of the vehicle so that the stressed means is maintained at a specific position.
    Type: Application
    Filed: November 16, 2023
    Publication date: May 23, 2024
    Inventors: Yinbing XU, Hua FAN, Wentao XU, Bin XU, Li ZHANG
  • Publication number: 20240162085
    Abstract: A method for manufacturing a semiconductor structure includes: a base provided with a contact hole is provided; an initial contact structure including a first diffusion barrier layer, a conductive layer and a second diffusion barrier layer stacked onto one another is formed on the base, the first diffusion barrier layer conformably covering the contact hole and covering part of a top surface of the base, the conductive layer covering first diffusion barrier layer and being filled in unoccupied space in the contact hole, the second diffusion barrier layer covering a side of the conductive layer away from first diffusion barrier layer, the initial contact structure outside the contact hole being provided with a groove exposing side walls of conductive layer and second diffusion barrier layer; a third diffusion barrier layer is formed on a side wall of initial contact structure exposed by the groove to obtain a target contact structure.
    Type: Application
    Filed: August 14, 2023
    Publication date: May 16, 2024
    Inventors: Wentao XU, Lintao ZHANG, Lei YANG, Haoran LI
  • Publication number: 20230412061
    Abstract: A power converter device includes power converter circuitry that includes multiple inductors. The power converter circuitry may convert an input voltage and current to an output voltage and current at a variable frequency via operation of the multiple inductors. The power converter device further includes control circuitry configured to implement cycle-by-cycle current output analysis to synchronize the multiple inductors to a particular current output characteristic of a first one of the multiple inductors.
    Type: Application
    Filed: June 19, 2023
    Publication date: December 21, 2023
    Inventors: Al-Thaddeus Avestruz, Xiaofan Cui, Veronica Contreras, Wentao Xu
  • Publication number: 20230205935
    Abstract: A system and method for efficiently processing security service requests are described. In various implementations, an integrated circuit includes at least one or more processors with a dedicated security processor and on-chip memory that has a higher security level than off-chip memory. During the processing of security service requests, the security processor receives multiple commands with each including a cryptographic function. The security processor identifies one or more issue groups of commands based at least upon data dependencies and shared source data. When the security processor determines an issued command is in a given issue group, the security processor issues a next command from remaining commands in the given issue group. Otherwise, the security processor issues an immediately next in-order command after the issued command.
    Type: Application
    Filed: December 28, 2021
    Publication date: June 29, 2023
    Inventors: Shijie Che, Wentao Xu
  • Patent number: 11604655
    Abstract: In a system with a master processor and slave processors, sync points are used in boot instructions. While executing the boot instructions, the slave processor determines whether the sync point is enabled. In response to determining the sync point is enabled, the slave processor pauses execution of the boot instructions, waits for commands from the master processor, receives commands from the master processor, executes the received commands until a release command is received, and then continues to execute boot instructions. In response to determining the sync point is not enabled, the slave processor continues to execute boot instructions.
    Type: Grant
    Filed: November 12, 2020
    Date of Patent: March 14, 2023
    Assignees: ATI Technologies ULC, Advanced Micro Devices, Inc.
    Inventors: Wentao Xu, Randall Alexander Brown, Vaibhav Amarayya Hiremath, Shijie Che, Kamraan Nasim
  • Publication number: 20230075293
    Abstract: A detection device using a lateral flow strip for detection and a detection method thereof are provided, which relates to the technical field of a detection device using a lateral flow strip. An upper rotor, a middle rotor and a lower rotor are respectively provided with upper paddle(s), middle paddle(s) and lower paddle(s) along respective circumferential directions. Each upper paddle is provided with a test tube with openings at both ends thereof for placing the lateral flow strip. The middle paddle blocks a bottom one of the openings of the test tube. Each lower paddle is provided with a sample tube for placing sample solution. The bottom opening of the test tube is opposite to a top opening of the sample tube up and down.
    Type: Application
    Filed: October 27, 2021
    Publication date: March 9, 2023
    Applicant: CHINA AGRICULTURAL UNIVERSITY
    Inventors: Nan CHENG, Xiaoyun HE, Wentao XU, Kunlun HUANG, Yunbo LUO, Qian ZHANG, Qingliang LIU
  • Publication number: 20230021267
    Abstract: Embodiments provide a semiconductor structure and fabrication method. The method include: forming sacrificial layers on a sidewall of the first pattern mask layer and a sidewall of the second pattern mask layer, and forming a first filling layer filling a first spacing between the sacrificial layers; removing the first filling layer, the first pattern mask layer and the second pattern mask layer, retaining the sacrificial layers and the first spacing, and replacing a second spacing between the first pattern mask layer and the second pattern mask layer; forming a second filling layer filling the first spacing and the second spacing; etching the sacrificial layers based on the second filling layer to form etched patterns, and etching the pattern transfer layer and the target layer based on the etched patterns to form a first pattern target layer in the array region and a second pattern target layer in the peripheral region.
    Type: Application
    Filed: September 26, 2022
    Publication date: January 19, 2023
    Inventors: Wentao XU, Qiao LI, Zhi YANG, Yue ZHUO
  • Publication number: 20230018973
    Abstract: Embodiments of the present invention provide a method for manufacturing a semiconductor structure, which includes: a base is provided and a stack layer is formed on the base, wherein the stack layer includes at least a first sacrificial layer, and a material of the first sacrificial layer includes an amorphous elemental semiconductor material; second hard mask patterns are formed on the first sacrificial layer through a self-aligned process; a doping process is performed, which includes the operation that a region of the first sacrificial layer exposed from gaps between the second hard mask patterns is doped; the second hard mask patterns are removed; and an undoped region of the first sacrificial layer is removed through a selective etching process so as to form first sacrificial patterns.
    Type: Application
    Filed: September 22, 2022
    Publication date: January 19, 2023
    Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventors: Zhaohui WANG, Wentao XU, Qiao LI
  • Publication number: 20220370981
    Abstract: Chemically and thermally stable covalent organic framework (COF) materials are configured and operative as solid adsorbents for capturing gases and water.
    Type: Application
    Filed: June 26, 2022
    Publication date: November 24, 2022
    Applicant: The Regents of the University of California
    Inventors: Omar M. Yaghi, Ha L. Nguyen, Steven L. Lyle, Nikita Hanikel, Hao Lyu, Wentao Xu
  • Publication number: 20220352361
    Abstract: Embodiments provide a transistor structure, a semiconductor structure and a fabrication method thereof. The method for fabricating a transistor structure includes: providing a substrate; forming a channel layer on an upper surface of the substrate, the channel layer including a two-dimensional layered transition metal material layer; forming a source and a drain on two opposite sides of the channel layer, respectively; forming a gate dielectric layer on the upper surface of the substrate, the gate dielectric layer covering the channel layer, the source, and the drain; and forming a gate on an upper surface of the gate dielectric layer, the gate being positioned at least directly above the channel layer.
    Type: Application
    Filed: June 20, 2022
    Publication date: November 3, 2022
    Inventors: Hui XUE, Wentao XU, Yutong SHEN, INHO PARK
  • Publication number: 20220335003
    Abstract: A computing system may implement a method for creating a first subdomain by configuring one of a first plurality of slave nodes as a first subdomain master node and configuring one or more other slave nodes of the first plurality of slave nodes as first subdomain slave nodes to the first subdomain master node.
    Type: Application
    Filed: April 19, 2021
    Publication date: October 20, 2022
    Inventors: Shijie Che, Wentao Xu, Randall Brown, Vaibhav Amarayya Hiremath, Manuchehr Taghi-Loo
  • Publication number: 20220147366
    Abstract: In a system with a master processor and slave processors, sync points are used in boot instructions. While executing the boot instructions, the slave processor determines whether the sync point is enabled. In response to determining the sync point is enabled, the slave processor pauses execution of the boot instructions, waits for commands from the master processor, receives commands from the master processor, executes the received commands until a release command is received, and then continues to execute boot instructions. In response to determining the sync point is not enabled, the slave processor continues to execute boot instructions.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 12, 2022
    Applicants: ATI Technologies ULC, Advanced Micro Devices, Inc.
    Inventors: Wentao Xu, Randall Alexander Brown, Vaibhav Amarayya Hiremath, Shijie Che, Kamraan Nasim
  • Publication number: 20220144637
    Abstract: Aluminum oxynitride (AlON) powder, a synthesis method thereof by direct nitridation under high pressure and use thereof, which belongs to the field of ceramic powder are presented. In the method, pure-phase AlON powder is synthesized by direct nitridation under high pressure with aluminum powder and alumina powder as starting materials. The powder has a spherical-like morphology, with a particle size ranging from 5 ?m to 15 ?m. The powder has good dispersibility and uniformity, and higher sintering activity. AlON transparent ceramic (1.2 mm thick) prepared from the AlON powder has a linear transmittance of more than 84%. The batch yield is on kilogram-scale; therefore, the method is suitable for large-scale production of the AlON powder.
    Type: Application
    Filed: November 10, 2021
    Publication date: May 12, 2022
    Inventors: Youfu ZHOU, Jian YANG, Wentao XU, Maochun HONG
  • Patent number: 11047037
    Abstract: Embodiments of the present disclosure are directed to thin conductive composites, such as biosensor electrodes, containing a polymeric film substrate a conductive layer disposed adjacent the substrate. The conductive layer includes Krypton and a conductive material. The conductive layer has an average thickness of no greater than about 150 nanometers. The conductive layer has a normalized thickness (t/?) of no greater than about 3.0. Further, the composite has a sheet resistance of no greater than about 97.077t?1.071 ohm/sq, where t represents the thickness of the conductive layer in nanometers.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: June 29, 2021
    Assignee: SAINT-GOBAIN PERFORMANCE PLASTICS CORPORATION
    Inventors: Wentao Xu, Fabien Lienhart
  • Patent number: 10831612
    Abstract: A primary node-standby node data transmission method includes an indication that a control node obtains an operation log generated by a primary node, where the operation log includes at least one operation record, and each operation record indicates a record of performing, by the primary node, a write operation on a local cache or a storage unit in a storage device. The method further includes the control node determining a first storage unit set that corresponds to a first standby node, the control node determining a second storage unit set that corresponds to the at least one operation record, the control node obtaining an operation record from the operation log, and the control node sending the corresponding operation record to the first standby node, where the storage unit intersection set is an intersection set of storage units in the first storage unit set and the second storage unit set.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: November 10, 2020
    Assignee: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Wei Wang, Jian Li, Wentao Xu
  • Publication number: 20190347167
    Abstract: Embodiments of the present invention disclose a primary node-standby node data transmission method. The method indicates that a control node obtains an operation log generated by a primary node, where the operation log includes at least one operation record, and each operation record indicates a record of performing, by the primary node, a write operation on a local cache or a storage unit in a storage device. Then the control node determines a first storage unit set corresponding to a first standby node, and determines a second storage unit set corresponding to the at least one operation record and The control node obtains an operation record from the operation log, and sends the corresponding operation record to the first standby node, where the storage unit intersection set is an intersection set of storage units in the first storage unit set and the second storage unit set.
    Type: Application
    Filed: July 25, 2019
    Publication date: November 14, 2019
    Inventors: Wei Wang, Jian Li, Wentao Xu