Patents by Inventor Wenting SHI

Wenting SHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Internal power generation circuit
    Patent number: 12105545
    Abstract: An internal power generation circuit comprises: a first internal power generation circuit, configured to generate a first power signal based on an external power signal, and including an NMOS transistor, voltage of the first power signal being lower than voltage of the external power signal by threshold voltage of one NMOS transistor, wherein the circuit further includes: a booster unit performing boosting on the first power signal, voltage of a boosted signal being higher than the voltage of the first power signal by at least the threshold voltage of one NMOS transistor; a self-starting feedback circuit configured to generate an output voltage signal based on the boosted signal and the external power signal, wherein before the output voltage signal reaches a target voltage, the output voltage signal follows the external power signal, and after the output voltage signal reaches the target voltage, the output voltage signal holds the target voltage.
    Type: Grant
    Filed: October 30, 2020
    Date of Patent: October 1, 2024
    Assignee: Wuxi Chipown Microelectronics Co., Ltd.
    Inventors: Jiawei Guan, Wenting Shi, Haisong Li, Yangbo Yi, Lixin Zhang
  • INTERNAL POWER GENERATION CIRCUIT
    Publication number: 20230205241
    Abstract: An internal power generation circuit comprises: a first internal power generation circuit, configured to generate a first power signal based on an external power signal, and including an NMOS transistor, voltage of the first power signal being lower than voltage of the external power signal by threshold voltage of one NMOS transistor, wherein the circuit further includes: a booster unit performing boosting on the first power signal, voltage of a boosted signal being higher than the voltage of the first power signal by at least the threshold voltage of one NMOS transistor; a self-starting feedback circuit configured to generate an output voltage signal based on the boosted signal and the external power signal, wherein before the output voltage signal reaches a target voltage, the output voltage signal follows the external power signal, and after the output voltage signal reaches the target voltage, the output voltage signal holds the target voltage.
    Type: Application
    Filed: October 30, 2020
    Publication date: June 29, 2023
    Applicant: Wuxi Chipown Microelectronics Co., Ltd.
    Inventors: Jiawei GUAN, Wenting SHI, Haisong LI, Yangbo YI, Lixin ZHANG