Patents by Inventor Wenwen XIAO

Wenwen XIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9142954
    Abstract: An ESD protection system includes an ESD leakage bus and an ESD protection circuit having one of its terminals connected to the ESD leakage bus. The ESD protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors. When the ESD protection system is applied to an X-ray flat panel detector, no photocurrent will occur during the use of the X-ray flat panel detector, the effect of the photocurrent on the voltage of the scan line is reduced. Further, when the first shading layer is connected to a negative fixed potential, it can be ensured that the ESD protection circuit has small threshold voltage while the leakage current in the ESD protection circuit is reduced, and power consumption is reduced.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: September 22, 2015
    Assignee: Shanghai Tianma Micro-Electronics Co., Ltd.
    Inventors: Zhongshou Huang, Jun Xia, Wenwen Xiao, Libo Jin
  • Publication number: 20140001368
    Abstract: An ESD protection system includes an ESD leakage bus and an ESD protection circuit having one of its terminals connected to the ESD leakage bus. The ESD protection circuit includes at least a pair of amorphous silicon thin film transistors which are connected in a back-to-back manner, and a first shading layer is provided over the channels of the pair of amorphous silicon thin film transistors. When the ESD protection system is applied to an X-ray flat panel detector, no photocurrent will occur during the use of the X-ray flat panel detector, the effect of the photocurrent on the voltage of the scan line is reduced. Further, when the first shading layer is connected to a negative fixed potential, it can be ensured that the ESD protection circuit has small threshold voltage while the leakage current in the ESD protection circuit is reduced, and power consumption is reduced.
    Type: Application
    Filed: September 5, 2013
    Publication date: January 2, 2014
    Applicant: Shanghai Tianma Micro-Electronics Co., Ltd.
    Inventors: Zhongshou HUANG, Jun XIA, Wenwen XIAO, Libo JIN