Abstract: Disclosed is a circular filter assembly, relating to the field of wireless communication. The circular filter assembly includes: a dielectric filter and a dielectric waveguide circulator. The dielectric waveguide circulator is provided with at least three end portions. An end of the dielectric filter is connected to one of the end portions. A cascade matching window is disposed at a connection between the dielectric filter and the end portion, and the cascade matching window is used for adjusting impedance of the circular filter assembly. The dielectric waveguide circulator and the dielectric filter are integrally formed. By integrally forming the dielectric waveguide circulator and the dielectric filter, connecting members between the dielectric waveguide circulator and the dielectric filter can be reduced. In addition, the cascade matching window is added to perform impedance adjustment, to obtain the same standing wave indicator as a conventional connection using a connector.

Abstract: Disclosed is a circular filter assembly, relating to the field of wireless communication. The circular filter assembly includes: a dielectric filter and a dielectric waveguide circulator. The dielectric waveguide circulator is provided with at least three end portions. An end of the dielectric filter is connected to one of the end portions. A cascade matching window is disposed at a connection between the dielectric filter and the end portion, and the cascade matching window is used for adjusting impedance of the circular filter assembly. The dielectric waveguide circulator and the dielectric filter are integrally formed. By integrally forming the dielectric waveguide circulator and the dielectric filter, connecting members between the dielectric waveguide circulator and the dielectric filter can be reduced. In addition, the cascade matching window is added to perform impedance adjustment, to obtain the same standing wave indicator as a conventional connection using a connector.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.

Abstract: Direct growth methods for preparing diamond-assisted heat-dissipation silicon carbide substrates of GaN-HEMTs are disclosed. In an embodiment, the direct growth method includes the following steps: (1) etching holes in a surface of a silicon carbide substrate to produce a silicon carbide wafer; (2) ultrasonic cleaning the produced silicon carbide wafer; (3) establishing an auxiliary nucleation point on a surface of the silicon carbide wafer; (4) depositing a diamond layer; (5) removing the portion of the diamond layer on the upper surface while retaining the portion of the diamond layer in the holes; (6) ultrasonic cleaning; and (7) depositing diamond in the holes on the silicon carbide wafer until the holes are fully filled.