Abstract: A method of gasification of biomass using a gasification island. The gasification island includes: a biomass pre-treatment and storage unit, a biomass feeder, an external heat source, a gasifier, a crude syngas cooling unit, a crude syngas washing unit, a fresh syngas storage unit, and an ash and wastewater treatment unit. The method includes: pre-treating and storing biomass, gasifying the biomass in the gasifier, cooling a crude syngas, washing and removing dust from the crude syngas, and storing fresh syngas.

Abstract: A method for cooling and washing biomass syngas, the method including the following steps: 1) introducing biomass syngas having a temperature of between 1000 and 1100° C., a dust content of less than 20 g/Nm3, and a tar content of less than 3 g/Nm3 to a quench tower for condensing a slag; 2) introducing the biomass syngas after slag condensation to a waste heat boiler for recovering waste heat and condensing a heavy tar in the syngas; 3) introducing the biomass syngas from the waste heat boiler to a scrubbing-cooling tower for removing dust and decreasing a temperature of the syngas; and 4) introducing the biomass syngas after dust removal and temperature decrease from the scrubbing-cooling tower to an electro-precipitator for further removal of the dust and the tar.

Abstract: The present invention relates to the manufacture of CMOS semiconductor device. This invention includes: Step S1, a layer of silicon oxide is deposited covering the surface of the polysilicon gates and the exposed upper surface of the silicon substrate, the silicon oxide layer is removed on the upper surface of the exposed silicon substrate, and then the barrier layer is formed at the surface of the polysilicon gates; Step S2, the ions are implanted into the exposed substrate, and then several doped silicon regions are formed in the silicon substrate; Step S3, the doped silicon regions are etched to form the trench of U-shape, then the barrier layer is removed. The present invention protects the polysilicon gate and the substrate during the process of forming the trench. The rate of etching is increased and the productivity is improved and it is possible to control the depth of the U-shaped trench.