Abstract: The present invention discloses an inverse design method of an on-chip filter based on equivalent circuit space mapping, and belongs to the technical field of radio frequency integrated circuits. According to the present invention, based on an equivalent circuit model, a nonlinear relationship between performance parameters and structure parameters of a CMOS millimeter-wave filter is divided into two parts, namely, a part of realizing mapping from performance parameters to equivalent circuit element values by virtue of an odd and even mode theory; and a part of establishing an artificial neural network (ANN) model, in which input vectors are the equivalent circuit element values and output vectors are the structure parameters. By space mapping in the design of the present invention, the defect of discretized sampling of the scattering parameters in a traditional modeling design method is avoided; and compared with forward optimization, the required design time can be significantly shortened.

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.