Patents by Inventor Wenyang BAI

Wenyang BAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
    Publication number: 20230129440
    Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.
    Type: Application
    Filed: June 3, 2022
    Publication date: April 27, 2023
    Applicants: University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong
    Inventors: Ming QIAO, Ruidi WANG, Yibing WANG, Wenyang BAI, Bo ZHANG