Abstract: An electronic package is provided, in which electronic elements and at least one packaging module including a semiconductor chip and a shielding structure covering the semiconductor chip are disposed on a carrier structure, an encapsulation layer encapsulates the electronic elements and the packaging module, and a shielding layer is formed on the encapsulation layer and in contact with the shielding structure. Therefore, the packaging module includes the semiconductor chip and the shielding structure and has a chip function and a shielding wall function simultaneously.

Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.

Abstract: The present invention provides a supporting hook structure, comprising a sleeve, a fixing rod, a first limit unit, a hook and a fixing device. The fixing rod is connected to the side surface of the sleeve. The hook body is connected to one end of the sleeve. The first limit unit is arranged on the side surface of the sleeve and adjacent to the hook body. The first limit unit makes the hook body rotates with the axis direction of the sleeve as a rotation axis. The fixing device is connected to the other end of the sleeve to fix the rotating position of the hook body. Through the above, the hook part enters the proximal thigh from a surgical entrance and the hook part rotates to make the hook part abut against the proximal femur to complete the positioning and fixation of the femur hook structure to the femur.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: A method for producing ?-aminobutyric acid includes cultivating, in a culture medium containing glutamic acid or a salt thereof, a probiotic composition including at least one lactic acid bacterial strain selected from the group consisting of Bifidobacterium breve CCFM1025 which is deposited at the Guangdong Microbial Culture Collection Center under an accession number GDMCC 60386, Lactobacillus acidophilus TYCA06, Lactobacillus plantarum LPL28, and Bifidobacterium longum subsp. infantis BLI-02 which are deposited at the China General Microbiological Culture Collection Center respectively under accession numbers CGMCC 15210, CGMCC 17954, and CGMCC 15212, Lactobacillus salivarius subsp. salicinius AP-32 which is deposited at the China Center for Type Culture Collection under an accession number CCTCC M 2011127, and combinations thereof.

Abstract: A polyester is formed by reacting a plurality of monomers. The monomers include 7 to 20 parts by mole of (a) aliphatic triol monomer, 40 to 80 parts by mole of (b) first diol monomer, 12 to 40 parts by mole of (c) second diol monomer, and 100 parts by mole of (d) aliphatic diacid monomer or aliphatic anhydride monomer. The (b) first diol monomer has a chemical structure of wherein each R1 is the same. The (c) second diol monomer has a chemical structure of wherein R6 is different from R7.

Abstract: A stackable raising seedling device has a device body and a floating planting board. The device body has raising seeding hole parts disposed at intervals and holes disposed intervals. The raising seeding hole pans and the holes are staggered in parallel and with each other along a first direction, the raising seeding hole part and the holes are staggered in parallel with each other along a second direction, and the holes of the first direction and the raising seeding hole parts of the second direction are adjacently arranged. The raising seeding hole pan can receive a culture medium layer, the culture medium layer has an agar gel, and the agar gel is composed of a plant growth nutrient, agar powder and water. The present disclosure improves the overall seed germination rate and the quality of planted crops when massively planting the planted crops.

Abstract: The present disclosure relates to a culture medium having an agar gel forming by at least one plant growth nutrient, agar powder and water, wherein the agar gel is 100 wt %. A culture medium manufacturing method, a culture medium structure and a culture medium structure usage method are also illustrated in the present disclosure. The culture medium structure has a culture medium of the above culture medium, a seeding board for receiving the culture medium layer, wherein the seeding board has a hollow body which has a top hole, a bottom hole opposite to the top hole and a top base disposed on a top peripheral of the hollow body, and the hollow body and the top base are integrally formed. Via the culture medium of the solid agar gel having the plant growth nutrient, growth health and quality of crops are enhanced.

Abstract: A new method of planarizing an integrated circuit is achieved. The dielectric layers between the conductive layers of an integrated circuit are formed and planarized via A first silicon oxide layer is deposited over the metal layer. This is covered with a spin-on-glass layer. This layer is dried by baking. The spin-on-glass layer is now fully cured. The cured spin-on-glass layer is now ion implanted under the conditions of between about 1E15 to 1E17 atoms/cm.sup.2 and energy between about 50 to 100 KeV. A silicon oxide layer is deposited thereover. Via openings are now made through the silicon oxide layers and the spin-on-glass layer and filled with metal. This results in excellent planarity with no poisoned via problems. Most importantly, this method can be used for submicron technologies having conductor lines which are spaced from one another by submicron feature size and can be processed without the use of an etch-back process for the cured spin on and glass layer.