Patents by Inventor Wenyi Liu

Wenyi Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250007218
    Abstract: The application belongs to the technical field of signal acquisition, and discloses a stacked large-capacity signal acquisition and transmission system, which includes an adapter board, n acquisition boards, central control boards and a communication board sequentially laminated; where a circuit structure of each of the acquisition boards is the same; the adapter board is provided with circuit board interfaces and a plurality of first board-level connectors; an m-th acquisition board is provided with a signal acquisition and conditioning module, at least n-m+1 second board-level connectors and at least m third board-level connectors; the central control board is provided with a signal conversion module, at least one fourth board-level connector and at least one fifth board-level connector.
    Type: Application
    Filed: June 26, 2024
    Publication date: January 2, 2025
    Inventors: Qiulin TAN, Helei DONG, Junqi PANG, Hua REN, Lei ZHANG, Wenyi LIU, Jijun XIONG
  • Patent number: 12184009
    Abstract: The application belongs to the technical field of signal acquisition, and discloses a stacked large-capacity signal acquisition and transmission system, which includes an adapter board, n acquisition boards, central control boards and a communication board sequentially laminated; where a circuit structure of each of the acquisition boards is the same; the adapter board is provided with circuit board interfaces and a plurality of first board-level connectors; an m-th acquisition board is provided with a signal acquisition and conditioning module, at least n?m+1 second board-level connectors and at least m third board-level connectors; the central control board is provided with a signal conversion module, at least one fourth board-level connector and at least one fifth board-level connector.
    Type: Grant
    Filed: June 26, 2024
    Date of Patent: December 31, 2024
    Assignee: NORTH UNIVERSITY OF CHINA
    Inventors: Qiulin Tan, Helei Dong, Junqi Pang, Hua Ren, Lei Zhang, Wenyi Liu, Jijun Xiong
  • Patent number: 11796351
    Abstract: Some embodiments of the disclosure provide a demodulation system for obtaining phase change parameters by a fiber-optic Fabry Perot sensor. In an embodiment, the demodulation system includes a transmitting module, a fiber-optic Fabry Perot sensor, a light splitting module, a filter module, a receiving module, and a processing module. The transmitting module transmits a beam with a predetermined wavelength range. The fiber-optic Fabry Perot sensor receives the beam and forms a reflected light beam. The light splitting module is arranged between the transmitting module and the fiber-optic Fabry Perot sensor. The filter module obtains the first light beam, the second light beam, and the third light beam. The filter module has a broadband filter. The receiving module receives the first light beam, the second light beam, and the third light beam and converts them into the first signal, the second signal, and the third signal.
    Type: Grant
    Filed: August 23, 2022
    Date of Patent: October 24, 2023
    Assignee: North University of China
    Inventors: Pinggang Jia, Jijun Xiong, Qianyu Ren, Jia Liu, Guowen An, Wenyi Liu
  • Publication number: 20230245925
    Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
    Type: Application
    Filed: March 24, 2023
    Publication date: August 3, 2023
    Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
  • Patent number: 11646226
    Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: May 9, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Wenyi Liu, Wei Tang, Srinivas Gandikota, Yixiong Yang, Yong Wu, Jianqiu Guo, Arkaprava Dan, Mandyam Sriram
  • Publication number: 20230062957
    Abstract: Some embodiments of the disclosure provide a demodulation system for obtaining phase change parameters by a fiber-optic Fabry Perot sensor. In an embodiment, the demodulation system includes a transmitting module, a fiber-optic Fabry Perot sensor, a light splitting module, a filter module, a receiving module, and a processing module. The transmitting module transmits a beam with a predetermined wavelength range. The fiber-optic Fabry Perot sensor receives the beam and forms a reflected light beam. The light splitting module is arranged between the transmitting module and the fiber-optic Fabry Perot sensor. The filter module obtains the first light beam, the second light beam, and the third light beam. The filter module has a broadband filter. The receiving module receives the first light beam, the second light beam, and the third light beam and converts them into the first signal, the second signal, and the third signal.
    Type: Application
    Filed: August 23, 2022
    Publication date: March 2, 2023
    Applicant: North University of China
    Inventors: Pinggang Jia, Jijun Xiong, Qianyu Ren, Jia Liu, Guowen An, Wenyi Liu
  • Patent number: 11515156
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Grant
    Filed: January 12, 2021
    Date of Patent: November 29, 2022
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Publication number: 20210351071
    Abstract: A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.
    Type: Application
    Filed: May 11, 2020
    Publication date: November 11, 2021
    Inventors: Wenyi LIU, Wei TANG, Srinivas GANDIKOTA, Yixiong YANG, Yong WU, Jianqiu GUO, Arkaprava DAN, Mandyam SRIRAM
  • Patent number: 11137301
    Abstract: Some embodiments of the disclosure provide an optical fiber Fabry-Perot sensor (1), and a manufacturing method thereof. According to an embodiment, the optical fiber Fabry-Perot sensor (1) includes a hollow tube body (10), a first optical fiber (20), and a second optical fiber (30). The hollow tube body (10) has a first tube body (11), a cavity portion (12), and a second tube body (13) sequentially arranged in an axial direction. The first optical fiber (20) is provided within the first tube body (11) in the axial direction and has a first light guide end face (21) provided within the cavity portion (12). The second optical fiber (30) is provided in the second tube body (13) in the axial direction and has a second light guide end face (31) provided within the cavity portion (12).
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: October 5, 2021
    Assignee: North University of China
    Inventors: Jijun Xiong, Pinggang Jia, Guocheng Fang, Yingping Hong, Ting Liang, Qiulin Tan, Wenyi Liu
  • Patent number: 11018009
    Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Guoqiang Jian, Wei Tang, Chi-Chou Lin, Paul Ma, Yixiong Yang, Mei Chang, Wenyi Liu
  • Publication number: 20210134593
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Application
    Filed: January 12, 2021
    Publication date: May 6, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Patent number: 10991586
    Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: April 27, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
  • Patent number: 10892157
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: January 12, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Publication number: 20200243341
    Abstract: In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
    Type: Application
    Filed: March 30, 2020
    Publication date: July 30, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yong Wu, Wei V. Tang, Jianqiu Guo, Wenyi Liu, Yixiong Yang, Jacqueline S. Wrench, Mandyam Sriram, Srinivas Gandikota, Yumin He
  • Publication number: 20200200624
    Abstract: Some embodiments of the disclosure provide an optical fiber Fabry-Perot sensor (1), and a manufacturing method thereof. According to an embodiment, the optical fiber Fabry-Perot sensor (1) includes a hollow tube body (10), a first optical fiber (20), and a second optical fiber (30). The hollow tube body (10) has a first tube body (11), a cavity portion (12), and a second tube body (13) sequentially arranged in an axial direction. The first optical fiber (20) is provided within the first tube body (11) in the axial direction and has a first light guide end face (21) provided within the cavity portion (12). The second optical fiber (30) is provided in the second tube body (13) in the axial direction and has a second light guide end face (31) provided within the cavity portion (12).
    Type: Application
    Filed: November 13, 2017
    Publication date: June 25, 2020
    Inventors: JIJUN XIONG, PINGGANG JIA, GUOCHENG FANG, YINGPING HONG, TING LIANG, QIULIN TAN, WENYI LIU
  • Patent number: 10636705
    Abstract: The method of treating a film stack includes depositing a barrier film containing a metal into a via formed within a dielectric layer disposed on a substrate and depositing a metal contact on the barrier film within the via, where a void is located within the barrier film or between the barrier film and the metal contact. The method also includes exposing the metal contact and the barrier film to an oxidizing agent at a temperature of less than 400° C. and at a pressure of about 20 bar to about 100 bar within a process chamber to produce a metal oxide within the void.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: April 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yifei Wang, Kurtis Leschkies, Fei Wang, Xin Liu, Wei Tang, Yixiong Yang, Wenyi Liu, Ludovic Godet
  • Publication number: 20190326120
    Abstract: The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
    Type: Application
    Filed: April 11, 2019
    Publication date: October 24, 2019
    Inventors: Guoqiang JIAN, WEI TANG, CHI-CHOU LIN, PAUL MA, YIXIONG YANG, MEI CHANG, WENYI LIU
  • Publication number: 20190198318
    Abstract: Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a carboxylic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, a hydrazide is exposed to a substrate to selectively form a blocking layer. In some embodiments, an alkyl phosphonic acid is exposed to a substrate to selectively form a blocking layer. In some embodiments, the alkyl phosphonic acid is formed in-situ and exposed to the substrate. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 27, 2019
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Wenyi Liu
  • Patent number: PP33884
    Abstract: A new and distinct cultivar of Alpinia plant named ‘LY1’ is disclosed characterized by robust plants with observed resistance to ginger blast. Inflorescences are long and composed of attractive pink flowers with yellow interior petaloids. Plants have a long flowering season, of nearly 8 months, with full-flowering from June to September in Guangdong Province, China. The new variety is useful as both a cut flower and landscape plant in warm climates.
    Type: Grant
    Filed: June 11, 2021
    Date of Patent: January 18, 2022
    Inventors: Wenyi Liu, Ling Lin, Nian Liu