Abstract: A method for SiC high-speed growth by regulating growth monomers using chemical potential under a non-equilibrium condition. The method uses a C-rich process (Si/H2=0.97‰, C/Si=1.55) to achieve a rapid growth of an epitaxial layer. When a relative chemical potential ?C of the C source in a growth atmosphere is high, growth monomers adsorbed in advance are SiC molecules in an epitaxial growth, and a height of a growth step is maintained at 1/2 c or 1 c. A rapid growth of the epitaxial growth is achieved, and a better surface roughness and a lower ionized doping concentration are obtained at the same time.