Abstract: In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region, and implanted into a second exposed portion in the second TFT region to define a second doped region and a second channel region. A second doping material is implanted into a third exposed portion smaller than the first exposed portion to form first source/drain regions and simultaneously define a first LDD region in the first TFT region. A first and a second gate structures are formed over the first and the second channel regions, respectively. In a certain direction, the first gate structure is longer than the first channel, and the second gate structure isn't longer than the second channel region.

Abstract: An organic light emitting diode (OLED) display includes a substrate defined with a plurality of pixel areas, a heating circuit structure disposed on the substrate, and a plurality of OLEDs corresponding to each pixel area. The heating circuit structure includes two conductive lines not connected to each other, a plurality of heating lines electrically connected to the two conductive lines and covering portions of each pixel areas, and a ground electrode.

Abstract: A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.

Abstract: A non-destructive contact test method and apparatus for testing an electric characteristic of a test object is provided. The method includes providing an apparatus having a conductor, wherein the conductor is in a liquid state; and using the conductor to contact a surface of the test object for testing the electric characteristic of the test object. Thus, damage to the test object during the test can be effectively avoided.

Abstract: A conducting line terminal structure for a display device. The conducting line terminal structure comprises a conducting member and an insulating layer covering a first section of the conductive member. A planarization layer is formed above a second section of the conductive member and overlaps a first section of the insulating layer and a conducting layer conductively couples to a third section of the conductive member.

Abstract: An organic light emitting diode (OLED) display includes a substrate defined with a plurality of pixel areas, a heating circuit structure disposed on the substrate, and a plurality of OLEDs corresponding to each pixel area. The heating circuit structure includes two conductive lines not connected to each other, a plurality of heating lines electrically connected to the two conductive lines and covering portions of each pixel areas, and a ground electrode.

Abstract: A non-destructive contact test method for testing an electric characteristic of a test object is provided. The method includes providing an apparatus having a conductor, wherein the conductor is in a liquid state; and using the conductor to contact a surface of the test object for testing the electric characteristic of the test object. Thus, damage to the test object during the test can be effectively avoided.

Abstract: A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.