Abstract: An electronic device includes a resistor with a drift region having majority carrier dopants of a first conductivity type and resistor terminals including first and second implanted wells with majority carrier dopants of the first conductivity type along laterally opposite sides of the drift region in a semiconductor layer, and a diode integrated with the resistor and including majority carrier dopants of a second conductivity type in the semiconductor layer adjacent one of the first and second implanted wells to limit a voltage across the resistor.

Abstract: A semiconductor device includes a semiconductor substrate. A well resistor is in the semiconductor substrate. A field plate is above the well resistor. An insulator is between the well resistor and the field plate. The well resistor includes a first terminal and a second terminal. The field plate may be coupled to the first terminal or the second terminal.

Abstract: An apparatus includes a powder storage tank (21) and a gas chamber (14), the powder storage tank (21) being provided with an outlet duct (23) in communication with the gas chamber (14). The apparatus further includes a monitoring device (24), a first switch (25) and a second switch (26). The monitoring device (24) is provided between the powder storage tank (21) and the gas chamber (14) while communicating with the outlet duct, and configured to monitor the powder content per unit volume in the outlet duct when the gas path between the monitoring device and the gas chamber is in the close state. The first switch (25) is provided between the monitoring device (24) and the outlet duct (23), and the second switch (26) is provided between the monitoring device (24) and the gas chamber (14). A method of using the apparatus is also provided.