Patents by Inventor Wenzhe GUO

Wenzhe GUO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OPTOELECTRONIC DEVICE HAVING A BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCTION
    Publication number: 20210313489
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Inventors: Xiaohang LI, Wenzhe GUO, Haiding SUN
  • Optoelectronic device having a boron nitride alloy electron blocking layer and method of production
    Patent number: 11069834
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: July 20, 2021
    Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Xiaohang Li, Wenzhe Guo, Haiding Sun
  • OPTOELECTRONIC DEVICE HAVING A BORON NITRIDE ALLOY ELECTRON BLOCKING LAYER AND METHOD OF PRODUCTION
    Publication number: 20200388722
    Abstract: An optoelectronic device a substrate, a first doped contact layer arranged on the substrate, a multiple quantum well layer arranged on the first doped contact layer, a boron nitride alloy electron blocking layer arranged on the multiple quantum well layer, and a second doped contact layer arranged on the boron nitride alloy electron blocking layer.
    Type: Application
    Filed: September 12, 2018
    Publication date: December 10, 2020
    Inventors: Xiaohang LI, Wenzhe GUO, Haiding SUN