Abstract: Disclosed is an autonomous mining method of industrial big data based on model sets, which comprises the following steps: S1, building model sets and a mining engine based on domain knowledge and structural characteristics of multi-source heterogeneous data; S2, carrying out data sampling on the multi-source heterogeneous data, and counting the fault-tolerant estimation of random error variance; S3, mining data sets by using the mining engine, and determining the optimal fault-tolerant model of each sampled data sequence and the optimal fault-tolerant estimation of model parameters; S4, performing goodness-of-fit statistics calculation and VV&A test by using the optimal fault-tolerant model; S5, acquiring data model representation and connotation knowledge based on model clustering. The method can realize the automation of the mining process of big data, the integration of associated knowledge, the expansion of model sets, the integration of mining and modeling and the optimization of mining results.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Quantum dots and methods of making quantum dots are described. A method begins with forming quantum dots having a core-shell structure with a plurality of ligands on the shell structure. The method includes exchanging the plurality of ligands with a plurality of second ligands. The plurality of second ligands have a weaker binding affinity to the shell structure than the plurality of first ligands. The plurality of second ligands are then exchanged with hydrolyzed alkoxysilane to form a monolayer of hydrolyzed alkoxysilane on a surface of the shell structure. The method includes forming a barrier layer around the shell structure by using the hydrolyzed alkoxysilane as a nucleation center.

Abstract: Embodiments of a display device including barrier layer coated quantum dots and a method of making the barrier layer coated quantum dots are described. Each of the barrier layer coated quantum dots includes a core-shell structure and a hydrophobic barrier layer disposed on the core-shell structure. The hydrophobic barrier layer is configured to provide a distance between the core-shell structure of one of the quantum dots with the core-shell structures of other quantum dots that are in substantial contact with the one of the quantum dots. The method for making the barrier layer coated quantum dots includes forming reverse micro-micelles using surfactants and incorporating quantum dots into the reverse micro-micelles. The method further includes individually coating the incorporated quantum dots with a barrier layer and isolating the barrier layer coated quantum dots with the surfactants of the reverse micro-micelles disposed on the barrier layer.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis.

Abstract: Embodiments of a population of buffered barrier layer coated nanostructures and a method of making the nanostructures are described. Each of the buffered barrier layer coated nanostructures includes a nanostructure, an optically transparent buffer layer disposed on the nanostructure, and an optically transparent buffered barrier layer disposed on the buffer layer. The buffered barrier layer is configured to provide a spacing between adjacent nanostructures in the population of buffered barrier layer coated nanostructures to reduce aggregation of the adjacent nanostructures. The method for making the nanostructures includes forming a solution of reverse micro-micelles using surfactants, incorporating nanostructures into the reverse micro-micelles, and incorporating a buffer agent into the reverse micro-micelles.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core and thick shells of ZnSe and ZnS, are provided. The nanostructures may have one or more gradient ZnSexS1-x monolayers between the ZnSe and ZnS shells, wherein the value of x decreases gradually from the interior to the exterior of the nanostructure. Also provided are methods of preparing the nanostructures comprising a high temperature synthesis method. The thick shell nanostructures of the present invention display increased stability and are able to maintain high levels of photoluminescent intensity over long periods of time. Also provided are nanostructures with increased blue light absorption.

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.