Abstract: A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

Abstract: The present disclosure relates to a non-contact switch. More particularly, the non-contact switch includes a button which is disposed at a predetermined position of a housing and operated by an external pressure while being formed, at one end portion thereof, with a magnetic substance; a magnetic field sensor device which is accommodated in the housing to face the magnetic substance and generates an induced voltage depending on an interval between the magnetic field sensor device and the magnetic substance; and a semiconductor device which is driven by the induced voltage generated at the magnetic field sensor device to switch power supplied from a separate battery to a separate load.

Abstract: The present disclosure relates to a non-contact switch. More particularly, the non-contact switch includes a button which is disposed at a predetermined position of a housing and operated by an external pressure while being formed, at one end portion thereof, with a magnetic substance; a magnetic field sensor device which is accommodated in the housing to face the magnetic substance and generates an induced voltage depending on an interval between the magnetic field sensor device and the magnetic substance; and a semiconductor device which is driven by the induced voltage generated at the magnetic field sensor device to switch power supplied from a separate battery to a separate load.

Abstract: Disclosed herein is a solidstate switch driving circuit for a vehicle. The solidstate switch driving circuit includes an oscillation circuit, a constant voltage circuit, a first Field Effect Transistor (FET), a second FET, a third FET configured, a first time constant circuit, a first time constant circuit, a reverse voltage protection diode, a solidstate power switch, and a second time constant circuit. The first time constant circuit is connected to the drain of the second FET and the drain of the third FET. The reverse voltage protection diode has an N pole and a P pole. The solidstate power switch selectively turns on and off power applied to the load. The second time constant circuit has one side connected to the first time constant circuit and the reverse voltage protection diode, and another side connected to a gate of the solidstate power switch.

Abstract: Disclosed herein is a solidstate switch driving circuit for a vehicle. The solidstate switch driving circuit includes an oscillation circuit, a constant voltage circuit, a first Field Effect Transistor (FET), a second FET, a third FET configured, a first time constant circuit, a first time constant circuit, a reverse voltage protection diode, a solidstate power switch, and a second time constant circuit. The first time constant circuit is connected to the drain of the second FET and the drain of the third FET. The reverse voltage protection diode has an N pole and a P pole. The solidstate power switch selectively turns on and off power applied to the load. The second time constant circuit has one side connected to the first time constant circuit and the reverse voltage protection diode, and another side connected to a gate of the solidstate power switch.

Abstract: Disclosed is an energy-saving dimming apparatus connected to a power source and a load, and adapted to control a luminance of the load. The dimming apparatus includes a first switching unit connected to a power supply line, a second switching unit connected between the first switching unit and a ground line, a microprocessor for generating a square-wave pulse having a duty cycle according to a luminance control command, a switch driver for generating switching control signals respectively adapted to perform alternate ON/OFF controls for the switching units in accordance with the square-wave pulse inputted thereto, and a low-pass filter for removing ripple components contained in a voltage applied to the load via the first switching unit.

Abstract: Disclosed is an energy-saving dimming apparatus connected to a power source and a load, and adapted to control a luminance of the load. The dimming apparatus includes a first switching unit connected to a power supply line, a second switching unit connected between the first switching unit and a ground line, a microprocessor for generating a square-wave pulse having a duty cycle according to a luminance control command, a switch driver for generating switching control signals respectively adapted to perform alternate ON/OFF controls for the switching units in accordance with the square-wave pulse inputted thereto, and a low-pass filter for removing ripple components contained in a voltage applied to the load via the first switching unit.