Abstract: A thin film transistor gate structure with a three-dimensional multichannel structure is disclosed.The thin film transistor gate structure according to the present invention comprises source/drain electrodes formed so as to be spaced from and opposite to each other on a substrate; semiconductive layers, comprised of a plurality of sub-semiconductive layers, each formed in a row, each end of the sub-semiconductive layers being in ohmic-contact with the source/drain electrodes; gate insulating layers surrounding each of the semiconductive layers; and gate electrodes surrounding each of the gate insulating layers.Accordingly, the whole outerlayers of each sub-semiconductive layer surrounded by the gate electrodes serve as channel regions. As a result, the effective channel area increases, thereby improving the channel conductance and current driving ability.