Patents by Inventor Weontae Oh

Weontae Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low dielectric organosilicate polymer composite
    Patent number: 7479509
    Abstract: Provided are a porous organosilicate polymer composite prepared by heating an organic/inorganic hybrid polymer in which an organosilicate polymer is chemically bonded to a radial pore-forming polymer ended with a hydrolyzable alkoxysilyl group and used as a core molecule, and a semiconductor device using an organosilicate polymer composite film including the porous organosilicate polymer composite. The organosilicate polymer composite film has a very low dielectric constant, and thus, is useful as a dielectric film of the semiconductor device.
    Type: Grant
    Filed: August 20, 2004
    Date of Patent: January 20, 2009
    Assignee: Postech Foundation
    Inventors: Moonhor Ree, Weontae Oh, Yong Taek Hwang, Byeongdu Lee
  • Novel polymer and production of nano-porous low dielectric polymer composite film using the same
    Publication number: 20060142504
    Abstract: A star-shaped polymer having an alkoxy silane end group and containing an ether group at the center thereof, which is represented by formula (I), is useful as a pore introducer to obtain a low dielectric silicate polymer film having nano-pores distributed regularly and evenly. The star-shaped polymer is prepared by comprising conducting a ring open polymerization of a cyclic monomer and a polyhydric alcohol, and reacting the resulting polymer with an alkoxy silane compound.
    Type: Application
    Filed: February 17, 2004
    Publication date: June 29, 2006
    Inventors: Moonhor Ree, Weontae Oh, Yongtaek Hwang, Byeongdu Lee
  • Low dielectric organosilicate polymer composite
    Publication number: 20060014845
    Abstract: Provided are a porous organosilicate polymer composite prepared by heating an organic/inorganic hybrid polymer in which an organosilicate polymer is chemically bonded to a radial pore-forming polymer ended with a hydrolyzable alkoxysilyl group and used as a core molecule, and a semiconductor device using an organosilicate polymer composite film including the porous organosilicate polymer composite. The organosilicate polymer composite film has a very low dielectric constant, and thus, is useful as a dielectric film of the semiconductor device.
    Type: Application
    Filed: August 20, 2004
    Publication date: January 19, 2006
    Applicant: POSTECH FOUNDATION
    Inventors: Moonhor Ree, Weontae Oh, Yong hwang, Byeongdu Lee