Abstract: A solar cell unit having a semiconductor body formed as a solar cell, whereby the semiconductor body has a front side and a back side, and the solar cell unit has a carrier with a top side and a bottom side, whereby a first contact surface and a second contact surface are formed on the top side, and the first contact surface is spaced apart from the second contact surface and the contact surfaces are metallically conductive and the back side of the semiconductor body is non-positively connected to the top side of the carrier. The solar cell unit has a secondary optical element to guide light to the front side of the semiconductor body, whereby the secondary optical element has a bottom side and the bottom side is non-positively connected to the front side of the semiconductor body.

Abstract: A solar cell unit having a semiconductor body formed as a solar cell, whereby the semiconductor body has a front side and a back side, and the solar cell unit has a carrier with a top side and a bottom side, whereby a first contact surface and a second contact surface are formed on the top side, and the first contact surface is spaced apart from the second contact surface and the contact surfaces are metallically conductive and the back side of the semiconductor body is non-positively connected to the top side of the carrier. The solar cell unit has a secondary optical element to guide light to the front side of the semiconductor body, whereby the secondary optical element has a bottom side and the bottom side is non-positively connected to the front side of the semiconductor body.

Abstract: A semiconductor structure with active zones, such as light diodes or photodiodes, including a substrate (SUB) with at least two active zones (AZ1-AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wavelength diode may be achieved, in which a first (lower) active zone (AZ1) is grown on a surface of the substrate (SUB), with one or several further active zones (AZ1-Azn) epitaxially grown one on the other and the active zones (AZ1-AZn) are serially connected from the lower active zone (AZ1) to an upper active zone (AZn), by means of tunnel diodes (TD1-TDn), serving as low-impedance resistors.