Patents by Inventor Werner Graf

Werner Graf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11903814
    Abstract: A delivery sleeve for assisting delivery of a tissue implant may include an enclosure an orifice, and a throat. A cinching mechanism, which may include a fastener, may be disposed about the throat. The fastener may be used to fasten the cinching mechanism in a cinched configuration to maintain the throat in a closed configuration. The cinching mechanism may include implant-size indicators thereon. A lubricant or lubricious material may be included upon an inner surface of the enclosure. The cinching mechanism may be used to change the configuration of the throat from an open configuration to a closed configuration. The fastener helps maintain the throat in a closed configuration.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: February 20, 2024
    Assignee: MENTOR WORLDWIDE LLC
    Inventors: Udo Werner Graf, Joseph Matton, Leo Kriksunov, Robert Tannhauser
  • Patent number: 11786360
    Abstract: The subject matter disclosed herein relates to an encoded cinching mechanism for use with an implant delivery sleeve. The delivery sleeve includes: an enclosure having a first portion, an orifice, and a throat disposed between the first portion and the orifice; and a cinching mechanism disposed about the throat, in which the cinching mechanism comprises a plurality of demarcations each of which are indicative of a sized opening of the throat.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: October 17, 2023
    Assignee: MENTOR WORLDWIDE LLC
    Inventors: Udo Werner Graf, Robert J. Tannhauser, Joseph Matton, Leo B. Kriksunov
  • Patent number: 11315242
    Abstract: Techniques for fracture detection are provided. A first image is received to be processed to identify rib fractures. A first set of regions of interest (ROIs) is identified by processing the first image using a first machine learning model, where each ROI in the first set of ROIs corresponds to a first potential fracture. Further, a first ROI of the first set of ROIs is upsampled, and the system attempts to verify the first potential fracture in the first ROI by processing the upsampled first ROI using a second machine learning model.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: April 26, 2022
    Assignee: International Business Machines Corporation
    Inventors: Amin Katouzian, Benedikt Werner Graf, Ahmed El Harouni, Yiting Xie, Arkadiusz Sitek, Vicky Guo, Arun Krishnan
  • Publication number: 20220000604
    Abstract: The subject matter disclosed herein relates to an encoded cinching mechanism for use with an implant delivery sleeve. The delivery sleeve includes: an enclosure having a first portion, an orifice, and a throat disposed between the first portion and the orifice; and a cinching mechanism disposed about the throat, in which the cinching mechanism comprises a plurality of demarcations each of which are indicative of a sized opening of the throat.
    Type: Application
    Filed: June 2, 2021
    Publication date: January 6, 2022
    Inventors: Udo Werner GRAF, Robert J. TANNHAUSER, Joseph MATTON, Leo B. KRIKSUNOV
  • Patent number: 10799313
    Abstract: A mammary tissue expander device including an inflatable shell having an anterior side and a posterior side, the anterior side having an upper pole portion and a lower pole portion meeting at an apex, and an injection port for receiving fluid therethrough to inflate the expander, and a substantially flat attachment flap coupled to the posterior side of the shell, and extending in an inferior direction beyond an inferior edge of the shell by a distance D such that the attachment flap may be extended around the inferior edge and upwards to overlay at least a portion of the anterior side of the shell.
    Type: Grant
    Filed: March 12, 2015
    Date of Patent: October 13, 2020
    Assignee: MENTOR WORLDWIDE LLC
    Inventors: Luis Alberto Davila, Udo Werner Graf, John Wesley Canady
  • Patent number: 10550765
    Abstract: An energy storage device having: a high-temperature regenerator containing a solid, particularly porous storage material (S); a working gas (A) as the heat transfer medium to transfer heat between the storage material (S) and the working gas (A) flowing through; and a charging circuit and a discharging circuit for the working gas (A). The charging circuit is designed such that starting from a pre-heating unit at least one first heat transfer duct of a recuperator, a first compressor (HO), the high-temperature regenerator, a second heat transfer duct of the recuperator and then a first expander are interconnected, thus forming a circuit, so as to conduct fluid.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: February 4, 2020
    Inventors: Peter Ortmann, Werner Graf
  • Publication number: 20190277196
    Abstract: An energy storage device having: a high-temperature regenerator containing a solid, particularly porous storage material (S); a working gas (A) as the heat transfer medium to transfer heat between the storage material (S) and the working gas (A) flowing through; and a charging circuit and a discharging circuit for the working gas (A). The charging circuit is designed such that starting from a pre-heating unit at least one first heat transfer duct of a recuperator, a first compressor (HO), the high-temperature regenerator, a second heat transfer duct of the recuperator and then a first expander are interconnected, thus forming a circuit, so as to conduct fluid.
    Type: Application
    Filed: October 26, 2017
    Publication date: September 12, 2019
    Inventors: Peter ORTMANN, Werner GRAF
  • Publication number: 20190274819
    Abstract: A delivery sleeve for assisting delivery of a tissue implant may include an enclosure an orifice, and a throat. A cinching mechanism, which may include a fastener, may be disposed about the throat. The fastener may be used to fasten the cinching mechanism in a cinched configuration to maintain the throat in a closed configuration. The cinching mechanism may include implant-size indicators thereon. A lubricant or lubricious material may be included upon an inner surface of the enclosure. The cinching mechanism may be used to change the configuration of the throat from an open configuration to a closed configuration. The fastener helps maintain the throat in a closed configuration.
    Type: Application
    Filed: March 6, 2018
    Publication date: September 12, 2019
    Inventors: Udo Werner GRAF, Joseph MATTON, Leo KRIKSUNOV, Robert TANNHAUSER
  • Patent number: 10280803
    Abstract: An energy storage device for storing energy including: a high-temperature regenerator containing a storage material and a working gas as heat transfer medium for the purpose of exchanging heat between the storage material and the traversing working gas, a closed charging circuit for the working gas, including a first compressor, a first expander, a first recuperator having a first and a second heat exchange duct, the high-temperature regenerator and a pre-heater, wherein the first compressor is coupled to the first expander by a shaft, a discharging circuit for the working gas, and including a switch that selectively connects the high-temperature regenerator to either the charging circuit or the discharging circuit, such that the circuit containing the high-temperature regenerator forms a closed circuit.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: May 7, 2019
    Inventors: Peter Ortmann, Werner Graf
  • Publication number: 20180142577
    Abstract: An energy storage device for storing energy including: a high-temperature regenerator containing a storage material and a working gas as heat transfer medium for the purpose of exchanging heat between the storage material and the traversing working gas, a closed charging circuit for the working gas, including a first compressor, a first expander, a first recuperator having a first and a second heat exchange duct, the high-temperature regenerator and a pre-heater, wherein the first compressor is coupled to the first expander by a shaft, a discharging circuit for the working gas, and including a switch that selectively connects the high-temperature regenerator to either the charging circuit or the discharging circuit, such that the circuit containing the high-temperature regenerator forms a closed circuit.
    Type: Application
    Filed: April 19, 2016
    Publication date: May 24, 2018
    Inventors: Peter ORTMANN, Werner GRAF
  • Publication number: 20160262835
    Abstract: A mammary tissue expander device including an inflatable shell having an anterior side and a posterior side, the anterior side having an upper pole portion and a lower pole portion meeting at an apex, and an injection port for receiving fluid therethrough to inflate the expander, and a substantially flat attachment flap coupled to the posterior side of the shell, and extending in an inferior direction beyond an inferior edge of the shell by a distance D such that the attachment flap may be extended around the inferior edge and upwards to overlay at least a portion of the anterior side of the shell.
    Type: Application
    Filed: March 12, 2015
    Publication date: September 15, 2016
    Inventors: Luis Alberto Davila, Udo Werner Graf, John Wesley Canady
  • Patent number: 9023709
    Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: May 5, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Hans-Peter Moll, Marco Lepper, Werner Graf
  • Publication number: 20150064872
    Abstract: When forming metallization layers of advanced semiconductor devices, one often has to fill apertures with a high aspect ratio with a metal, such as copper. The present disclosure provides a convenient method for forming apertures with a high aspect ratio in an insulating layer. This insulating layer may have been deposited on the surface of a semiconductor device. The proposed method relies on an ion implantation step performed on the insulating layer, followed by an etch, which is preferably a wet etch.
    Type: Application
    Filed: August 27, 2013
    Publication date: March 5, 2015
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Hans-Peter Moll, Marco Lepper, Werner Graf
  • Patent number: 8138538
    Abstract: One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.
    Type: Grant
    Filed: October 10, 2008
    Date of Patent: March 20, 2012
    Assignee: Qimonda AG
    Inventors: Hans-Peter Moll, Gouri Sankar Kar, Martin Popp, Lars Heineck, Peter Lahnor, Arnd Scholz, Stefan Jakschik, Wolfgang Roesner, Gerhard Enders, Werner Graf, Peter Baars, Klaus Muemmler, Bernd Hintze, Andrei Josiek
  • Patent number: 8008729
    Abstract: An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.
    Type: Grant
    Filed: October 15, 2008
    Date of Patent: August 30, 2011
    Assignee: Qimonda AG
    Inventors: Werner Graf, Clemens Fitz
  • Patent number: 7838928
    Abstract: In one embodiment, a memory cell includes a bit line arranged in a semiconductor substrate and a bit line contact region arranged adjacent the bit line. A word line is arranged above the bit line contact region in a trench formed in the semiconductor substrate. A generally U-shaped insulating layer is arranged in a bottom region of the trench and separates the bit line and the bit line contact region from the word line.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: November 23, 2010
    Assignee: Qimonda AG
    Inventors: Werner Graf, Lars Heineck, Martin Popp
  • Publication number: 20100090285
    Abstract: An integrated circuit includes a contact structure with a buried first and a protruding second portion. The buried first portion is arranged in a cavity formed in a semiconductor structure and is in direct contact with the semiconductor structure. The protruding second portion is arranged above the main surface of the semiconductor structure and in direct contact with a conductive structure that is spaced apart from or separated from the main surface of the semiconductor structure. An insulator structure is arranged below and in direct contact with the contact structure.
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Applicant: QIMONDA AG
    Inventors: Werner Graf, Clemens Fitz
  • Publication number: 20100090264
    Abstract: One embodiment relates to an integrated circuit formed on a semiconductor body having interconnect between source/drain regions of a first and second transistor. The interconnect includes a metal body arranged underneath the surface of the semiconductor body. A contact element establishes electrical contact between the metal body and the source/drain regions of the first and second transistor. The contact element extends along a connecting path between the source/drain regions of the first and second transistors. Other methods, devices, and systems are also disclosed.
    Type: Application
    Filed: October 10, 2008
    Publication date: April 15, 2010
    Applicant: Qimonda AG
    Inventors: Hans-Peter Moll, Gouri Sankar Kar, Martin Popp, Lars Heineck, Peter Lahnor, Arnd Scholz, Stefan Jakschik, Wolfgang Roesner, Gerhard Enders, Werner Graf, Peter Baars, Klaus Muemmler, Bernd Hintze, Andrei Josiek
  • Publication number: 20100016843
    Abstract: A tip (8) comprising a first portion (8r) that is configured to be removably coupled to a laser porator (10) and a second portion (8h) defining an aperture (8x) and comprising a tissue biasing element (8a) that is configured to deform at least a portion (1a) of a tissue (1) that is subject to a laser treatment.
    Type: Application
    Filed: October 25, 2007
    Publication date: January 21, 2010
    Applicant: PANTEC BIOSOLUTIONS AG
    Inventors: Thomas Bragagna, Werner Graf
  • Publication number: 20090302380
    Abstract: In one embodiment, a memory cell includes a bit line arranged in a semiconductor substrate and a bit line contact region arranged adjacent the bit line. A word line is arranged above the bit line contact region in a trench formed in the semiconductor substrate. A generally U-shaped insulating layer is arranged in a bottom region of the trench and separates the bit line and the bit line contact region from the word line.
    Type: Application
    Filed: June 6, 2008
    Publication date: December 10, 2009
    Applicant: QIMONDA AG
    Inventors: Werner Graf, Lars Heineck, Martin Popp