Patents by Inventor Werner Karl Goetz
Werner Karl Goetz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10586891Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: GrantFiled: February 25, 2019Date of Patent: March 10, 2020Assignee: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker Mclaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20190259914Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: ApplicationFiled: February 25, 2019Publication date: August 22, 2019Applicant: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker Mclaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 10304997Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: GrantFiled: October 27, 2011Date of Patent: May 28, 2019Assignee: Lumileds LLCInventors: Michael Jason Grundmann, Nathan Frederick Gardner, Werner Karl Goetz, Melvin Barker McLaurin, John Edward Epler, Francisco Alexander Leon
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Patent number: 10217901Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: GrantFiled: July 17, 2017Date of Patent: February 26, 2019Assignee: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20170317237Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: ApplicationFiled: July 17, 2017Publication date: November 2, 2017Applicant: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 9711687Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: GrantFiled: November 20, 2015Date of Patent: July 18, 2017Assignee: Koninklijke Philips N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20160163927Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: ApplicationFiled: November 20, 2015Publication date: June 9, 2016Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 9209359Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: GrantFiled: November 1, 2011Date of Patent: December 8, 2015Assignee: Koninklijke Philips N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20150115299Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: ApplicationFiled: October 27, 2011Publication date: April 30, 2015Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael Jason Grundmann, Nathan Frederick Gardner, Werner Karl Goetz, Melvin Barker Mclaurin, John Edward Epler, Francisco Alexander Leon
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Publication number: 20140048817Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: ApplicationFiled: November 1, 2011Publication date: February 20, 2014Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michail Jason Grundmann, Melvin Barker Mclaurin, John Edward Elper, Michael David Camras, Aurelien Jean Francois Davie