Patents by Inventor Werner Klingenstein

Werner Klingenstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated polysilicon diode contact for gain memory cells
    Patent number: 5710448
    Abstract: An integrated polysilicon diode contact having multiple doped layers. A first highly doped layer of a first dopant type is deposited on a silicon substrate. A second highly doped layer of a second, different dopant type is deposited on the substrate, separated by a spacer from the first highly doped layer. A third lower doped layer of the second dopant type is deposited on the first highly doped layer and second highly doped layers, the third lower doped layer forming a p-n junction with a source region having a dopant of the first type.
    Type: Grant
    Filed: October 27, 1995
    Date of Patent: January 20, 1998
    Assignee: Siemens Aktiengesellschaft
    Inventors: Wolfgang H. Krautschneider, Doris Schmitt-Landsiedel, Werner Klingenstein