Abstract: A method for fabricating an integrated circuit including forming a first trench in a rear side of a semiconductor wafer, wherein the first trench has a depth extending partially through a thickness of the semiconductor wafer, coating the rear side with a layer of coating material, including filling the first trench with the coating material, and forming a second trench in a front side of the semiconductor wafer, wherein the second trench is aligned with and has a width less than a width of the first trench, and wherein the second trench has a depth extending at least through a remaining portion of the semiconductor wafer so as to be in communication with the coating material filling the first trench.

Abstract: A method of fabricating a semiconductor chip includes the providing an adhesive layer on the outer area of the active surface of a device wafer and attaching a rigid body to the active surface by the adhesive layer. The device wafer is thinned by treating the passive surface of the device wafer. A first backing tape is connected to the passive surface of the device wafer. The outer portion of the rigid body is separated from the central portion of the rigid body and the outer portion of the device wafer is separated from the central portion of the device wafer. The central portion of the rigid body, the outer portion of the device wafer and the outer portion of the rigid body are removed from the first backing tape. The device wafer may be diced into semiconductor chips.

Abstract: An explanation is given of, inter alia, an electronic device (10), comprising: an integrated component (12) with a substrate, an electrically conductive first layer region (14), arranged at the substrate, wherein the layer thickness of the first layer region is greater than 10 micrometres or greater than 50 micrometres.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: A method and a device for treating wafers on assembly carriers is disclosed. A wafer to be treated can be fixed on a liquid film that is located between the front side of the wafer and the assembly carrier by freezing of the film.

Abstract: A device and a method for the processing of wafers is disclosed. One embodiment provides a method and a device in which a system wafer is bonded to a carrier work piece by using a bonding substance so as to increase the stability of the system wafer. After processing of the system wafer, the bonding effect of the bonding substance is cancelled. The system wafer can easily be detached from the carrier work piece without cutting out the carrier work piece, so that the dust exposure and the mechanical stress of the system wafer which occurs during the cutting out of the carrier work piece is avoided.

Abstract: Thin integrated semiconductor devices are produced by being embedded in a molding compound matrix in such a way that a composite is formed. The semiconductor devices are first embedded in the matrix and then thinned after being embedded. The thin integrated semiconductor devices are singulated by forming separating cuts into the molding compound matrix between adjacent devices.

Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.

Abstract: A device for connecting two wafers in a planar manner for grinding down and cutting up a product wafer has a vacuum chamber, a chuck for receiving a carrier wafer, a heating device for heating up the chuck and a vacuum-chamber cover with a vacuum-holding device, on which a product wafer can be arranged suspended above the carrier wafer. After the evacuation of the vacuum chamber, the active surface of the product wafer is dropped onto a double-sided adhesive film on the carrier wafer and is pressed into place by the rising pressure during air admission. The result is that the wafers are connected together.