Abstract: A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiece is separated from the workpiece support.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiece is separated from the workpiece support.

Abstract: A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.

Abstract: A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiece is separated from the workpiece support.

Abstract: Explained, inter alia, is a method in which a workpiece (52) to be processed is fastened to a work carrier (10) by means of a solid (62). The work carrier (10) is made of a porous material, e.g. of porous ceramic. This processing method permits simple manipulation of the wafer during the processing. In addition, the workpiece (52) can be easily separated from the work carrier (10) using a solvent.

Abstract: A method of making an integrated circuit includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, at least one of the first surface and the second surface including a metallization layer deposited onto the surface. The method additionally includes forming a first trench in the semiconductor wafer extending from one of the first surface and the second surface toward an other of the first surface and the second surface. The method further includes sawing a second trench in the other surface until the second trench communicates with the first trench, thus singulating the integrated circuit from the semiconductor wafer.

Abstract: A method of making an integrated circuit includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, at least one of the first surface and the second surface including a metallization layer deposited onto the surface. The method additionally includes forming a first trench in the semiconductor wafer extending from one of the first surface and the second surface toward an other of the first surface and the second surface. The method further includes sawing a second trench in the other surface until the second trench communicates with the first trench, thus singulating the integrated circuit from the semiconductor wafer.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: A semiconductor device having a topology adjustment and a method for adjusting the topology of a semiconductor device. The semiconductor device includes a semiconductor wafer having first and second opposing sides with an active area formed on a first portion of the first side having a topology extending a first distance above the first side. A support member is attached to a second portion of the first side and extending a second distance above the first side, wherein the first distance is about the same as the second distance. In some exemplary embodiments, the support member is formed by applying adhesive to the second portion. The wafer is then spun to adjust the second distance.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: A workpiece machining method includes attaching a workpiece to a workpiece support with the aid of joining means. The workpiece and the workpiece support are joined to one another by an annular joining means. The composite produced is machined. The machined workpiece is separated from the workpiece support.

Abstract: A device for connecting two wafers in a planar manner for grinding down and cutting up a product wafer has a vacuum chamber, a chuck for receiving a carrier wafer, a heating device for heating up the chuck and a vacuum-chamber cover with a vacuum-holding device, on which a product wafer can be arranged suspended above the carrier wafer. After the evacuation of the vacuum chamber, the active surface of the product wafer is dropped onto a double-sided adhesive film on the carrier wafer and is pressed into place by the rising pressure during air admission. The result is that the wafers are connected together.

Abstract: A device for connecting two wafers in a planar manner for grinding down and cutting up a product wafer has a vacuum chamber, a chuck for receiving a carrier wafer, a heating device for heating up the chuck and a vacuum-chamber cover with a vacuum-holding device, on which a product wafer can be arranged suspended above the carrier wafer. After the evacuation of the vacuum chamber, the active surface of the product wafer is dropped onto a double-sided adhesive film on the carrier wafer and is pressed into place by the rising pressure during air admission. The result is that the wafers are connected together.

Abstract: To increase the scratch resistance of a surface passivation, in particular, for fingerprint sensors, a antifrictional layer is applied to reduce the shearing forces. The antifrictional layer includes fat, oil, surfactants and/or wax. The antifrictional layer is preferably an emulsion including water, paraffin oil, propylene glycol, stearic acid, palmitic acid, TEA, beeswax, carbormer 954, methylparaben, propylparaben and possibly perfume.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

Abstract: A stabilization device and method for stabilizing a workpiece such as a thin film wafer is presented. The thin wafer is fixed and oriented in planar fashion. The stabilization device is realized by a profiled ring which is arranged on the periphery of the wafer and is intimately connected thereto. The stabilization device and wafer are connected via negative pressure or by means of an adhesive having high thermal stability. The wafer and device are formed from similar semiconductor materials and have the same outline contour. The stabilization device remains on the wafer during process steps in the course of production and processing of the wafer.

Abstract: Explained, inter alia, is a method in which a workpiece (52) to be processed is fastened to a work carrier (10) by means of a solid (62). The work carrier (10) is made of a porous material, e.g. of porous ceramic. This processing method permits simple manipulation of the wafer during the processing. In addition, the workpiece (52) can be easily separated from the work carrier (10) using a solvent.

Abstract: A device for connecting two wafers in a planar manner for grinding down and cutting up a product wafer has a vacuum chamber, a chuck for receiving a carrier wafer, a heating device for heating up the chuck and a vacuum-chamber cover with a vacuum-holding device, on which a product wafer can be arranged suspended above the carrier wafer. After the evacuation of the vacuum chamber, the active surface of the product wafer is dropped onto a double-sided adhesive film on the carrier wafer and is pressed into place by the rising pressure during air admission. The result is that the wafers are connected together.

Abstract: A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.