Abstract: A superconductor comprises a high-temperature superconducting tape conductor, HTS tape conductor, and at least one layer of metal foil which is wound around the HTS tape conductor and soldered thereto in a spiral shape in a plurality of windings and thereby forms a reinforcement which hermetically seals the HTS tape conductor. Such a superconductor can be manufactured by a method which comprises the following steps: spiral wrapping an HTS tape conductor with at least one layer of a solder-coated metal foil, heating the metal foil above the melting point of the solder coating and subsequently cooling to below the melting point of the solder coating in order to connect the metal foil to the HTS tape conductor and thereby form a reinforcement which hermetically seals the HTS tape conductor.

Abstract: The present invention refers to a method for applying a smoothening layer on a band substrate for subsequent manufacturing a high temperature superconductor tape, wherein the method comprises the steps: (a) applying a liquid containing polysilazane on at least one side of the band substrate; and (b) heating the liquid containing polysilazane to a temperature?450° C. for depositing a layer on the band substrate which comprises silicon oxynitride (SiNxOy, wherein 0?x<0.6 and 1.0<y?2.0), and/or silicon-carbon-oxynitride (SiCxNyOz, 2·y<x?1.0, 0<y<0.2 and 1.0<z?2.0).

Abstract: The invention relates to a high temperature superconducting tape conductor having a flexible metal substrate that comprises at least one intermediate layer disposed on the flexible metal substrate and comprising terraces on the side opposite the flexible metal substrate, wherein a mean width of the terraces is less than 1 ?m and a mean height of the terraces is more than 20 nm, and that comprises at least one high temperature superconducting layer disposed on the intermediate layer, which is disposed on the at least one intermediate layer and comprises a layer thickness of more than 3 ?m. The ampacity of the high temperature superconducting tape conductor relative to the conductor width is more than 600 A/cm at 77 K.

Abstract: The present invention refers to a method for applying a smoothening layer on a band substrate for subsequent manufacturing a high temperature superconductor tape, wherein the method comprises the steps: (a) applying a liquid containing polysilazane on at least one side of the band substrate; and (b) heating the liquid containing polysilazane to a temperature?450° C. for depositing a layer on the band substrate which comprises silicon oxynitride (SiNxOy, wherein 0?x<0.6 and 1.0<y?2.0), and/or silicon-carbon-oxynitride (SiCxNyOz, 2·y<x?1.0, 0<y<0.2 and 1.0<z?2.0).

Abstract: The invention relates to a high temperature superconducting tape conductor having a flexible metal substrate that comprises at least one intermediate layer disposed on the flexible metal substrate and comprising terraces on the side opposite the flexible metal substrate, wherein a mean width of the terraces is less than 1 ?m and a mean height of the terraces is more than 20 nm, and that comprises at least one high temperature superconducting layer disposed on the intermediate layer, which is disposed on the at least one intermediate layer and comprises a layer thickness of more than 3 ?m. The ampacity of the high temperature superconducting tape conductor relative to the conductor width is more than 600 A/cm at 77 K.

Abstract: The invention relates to a vacuum coating method with very high deposition rates at high layer thickness homogeneity and material yield as well as apparatuses for achieving the coating. In order to overcome the existing conflict between layer thickness homogeneity on the one side and material yield and coating rate on the other side reducing the classic vacuum evaporation, the substrate forms the boundary of an essentially closed coating chamber which is supplied by an evaporation source. The walls of this coating chamber as well as all surfaces which are not to be coated are either kept at a certain temperature or provided with a non-stick coating such that the vapor cannot condensate thereon and is scattered back into the coating chamber. Thereby, a very high vapor pressure is created in the coating chamber which leads to a very high condensation rate onto the substrate and to a homogenization of the layer thickness.

Abstract: According to a first aspect the present invention relates to a fault current limiter formed by a conductor tape (11, 41, 51, 61, 71) coated with a high temperature superconductor and having at least one mounting element (12, 42, 52, 62, 72) which is essentially holding the conductor tape solely on one or more edge regions in such a way that the principal surfaces of the tape cannot get in touch with the mounting element. According to a second aspect the present invention relates to a fault current limiter formed by a conductor tape coated with a high temperature superconductor and comprising at least one mounting element (23, 24) which is contacting the conductor tape on one or on both major surfaces in an electrically conducting manner such that the conductor tape (21) in its normal conducting state is electrically shunted by the mounting element (23) in the contact region.

Abstract: According to a first aspect the present invention relates to a fault current limiter formed by a conductor tape (11, 41, 51, 61,71) coated with a high temperature superconductor and having at least one mounting element (12, 42, 52, 62, 72) which is essentially holding the conductor tape solely on one or more edge regions in such a way that the principal surfaces of the tape cannot get in touch with the mounting element. According to a second aspect the present invention relates to a fault current limiter formed by a conductor tape coated with a high temperature superconductor and comprising at least one mounting element (23, 24) which is contacting the conductor tape on one or on both major surfaces in an electrically conducting manner such that the conductor tape (21) in its normal conducting state is electrically shunted by the mounting element (23) in the contact region.